2SD1297 Datasheet and Replacement
Type Designator: 2SD1297
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100
W
Maximum Collector-Base Voltage |Vcb|: 150
V
Maximum Collector Current |Ic max|: 25
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 12000
Noise Figure, dB: -
Package:
TO126
2SD1297 Transistor Equivalent Substitute - Cross-Reference Search
2SD1297 Datasheet (PDF)
..2. Size:28K jmnic
2sd1297.pdf 

Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors B C E Features Darlington With TO-3PFa package Low speed power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 5 V IC Collector current-Continuous 25 A ... See More ⇒
..3. Size:220K inchange semiconductor
2sd1297.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1297 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low ... See More ⇒
8.5. Size:117K jmnic
2sd1294.pdf 

Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION With TO-3P(I) package Included avalanche diode High DC current gain Darlington connected type APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter Fig.1 simplified outline (TO-3P(I)) and symbol ... See More ⇒
8.6. Size:74K jmnic
2sd1290.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1290 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out... See More ⇒
8.7. Size:75K jmnic
2sd1291.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1291 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified out... See More ⇒
8.8. Size:82K jmnic
2sd1296.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) a... See More ⇒
8.10. Size:215K inchange semiconductor
2sd1294.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1294 DESCRIPTION Included Avalanche Diode- V = 60 15V Z High DC Current Gain h = 2000 20000@ I = 0.5A, V = 5V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
8.11. Size:213K inchange semiconductor
2sd1290.pdf 

isc Silicon NPN Power Transistor 2SD1290 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V... See More ⇒
8.12. Size:216K inchange semiconductor
2sd1298.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1298 DESCRIPTION High DC Current Gain h = 200(Min.)@ I = 6A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low s... See More ⇒
8.13. Size:214K inchange semiconductor
2sd1291.pdf 

isc Silicon NPN Power Transistor 2SD1291 DESCRIPTION High Voltage Wide Area of Safe Operation Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V... See More ⇒
8.14. Size:221K inchange semiconductor
2sd1296.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1296 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 15A, V = 2V FE C CE High Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low ... See More ⇒
Datasheet: 2SD129
, 2SD1290
, 2SD1291
, 2SD1292
, 2SD1293M
, 2SD1294
, 2SD1295
, 2SD1296
, 2SA1943
, 2SD1298
, 2SD1299
, 2SD13
, 2SD130
, 2SD1300
, 2SD1301
, 2SD1302
, 2SD1303
.
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