2SD1314 Specs and Replacement
Type Designator: 2SD1314
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO264
2SD1314 Substitution
- BJT ⓘ Cross-Reference Search
2SD1314 datasheet
2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit mm Motor Control Applications High DC current gain hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed t = 3 s (max) (I = 15 A) f C Maximum Ratings ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION High DC Current Gain h = 100(Min) @ I = 15A FE C Collector-Emitter Sustaining Voltage- V = 450V (Min) CEO(SUS) Fast Switching Speed Low Collector-Emitter Saturation Voltage- V = 2.0V (Max) @ I = 15A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable o... See More ⇒
Detailed specifications: 2SD1307 , 2SD1308 , 2SD1309 , 2SD131 , 2SD1310 , 2SD1311 , 2SD1312 , 2SD1313 , A733 , 2SD1315 , 2SD1316 , 2SD1317 , 2SD1318 , 2SD1319 , 2SD131D , 2SD132 , 2SD1320 .
Keywords - 2SD1314 pdf specs
2SD1314 cross reference
2SD1314 equivalent finder
2SD1314 pdf lookup
2SD1314 substitution
2SD1314 replacement
