2SD1330 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1330
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200(typ) MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SC71
2SD1330 Transistor Equivalent Substitute - Cross-Reference Search
2SD1330 Datasheet (PDF)
2sd1330 e.pdf
Transistor2SD1330Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting6.9 0.1 2.5 0.1For DC-DC converter1.51.5 R0.9 1.0R0.9FeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.0.85M type package allowing easy automatic and manual insertion as0.55 0.1 0.4
2sd1330.pdf
Transistors2SD1330Silicon NPN epitaxial planar typeFor low-voltage output amplificationUnit: mmFor muting2.50.16.90.1For DC-DC converter(1.0)(1.5)(1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion a
2sd133.pdf
isc Silicon NPN Power Transistor 2SD133DESCRIPTIONCollector Current: I = 7ACCollector-Emitter BreakdownVoltage-: V = 120V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
2sd1338.pdf
isc Silicon NPN Power Transistor 2SD1338DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1336.pdf
isc Silicon NPN Darlington Power Transistor 2SD1336DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 4VFE C CEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
