All Transistors. 2SD1332 Datasheet

 

2SD1332 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1332

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO218

2SD1332 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1332 Datasheet (PDF)

4.1. 2sd1330.pdf Size:84K _panasonic

2SD1332
2SD1332

Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification Unit: mm For muting 2.50.1 6.90.1 For DC-DC converter (1.0) (1.5) (1.5) Features Low collector-emitter saturation voltage VCE(sat) R 0.9 Low ON resistance Ron R 0.7 High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion as well as stan

4.2. 2sd1330 e.pdf Size:47K _panasonic

2SD1332
2SD1332

Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting 6.9 0.1 2.5 0.1 For DC-DC converter 1.5 1.5 R0.9 1.0 R0.9 Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 0.85 M type package allowing easy automatic and manual insertion as 0.55 0.1 0.45 0.0

 4.3. 2sd1336.pdf Size:258K _inchange_semiconductor

2SD1332
2SD1332

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1336 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching APPLICATIONS ·High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Colle

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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