2SD1343 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1343
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
2SD1343 Transistor Equivalent Substitute - Cross-Reference Search
2SD1343 Datasheet (PDF)
2sd1348.pdf
Ordering number:1245CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB986/2SD134850V/4A Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2009B[2SB986/2SD1348]Features Adoption of FBET and MBIT processes. Low saturation voltage. High current capacity and wide ASO.JEDEC :
2sd1347.pdf
Ordering number:1244CPNP/NPN Epitaxial Planar Silicon Transistors2SB985/2SD1347Large-Current Driving ApplicationsApplcations Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB985/2SD1347]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.EIAJ : SC-51 B :
2sd1345.pdf
isc Silicon NPN Power Transistor 2SD1345DESCRIPTIONHigh Switching TimeLow Collector Saturation Voltage: V = 0.4V(Max)@I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB983Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverters, convertersControllers for DC motor, pulse motorSwitching power sup
2sd1344.pdf
isc Silicon NPN Power Transistor 2SD1344DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1342.pdf
isc Silicon NPN Power Transistor 2SD1342DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1348.pdf
isc Silicon NPN Power Transistor 2SD1348DESCRIPTIONHigh Collector Current-I = 4.0ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2A, I = 0.1ACE(sat) C BGood Linearity of hFEComplement to Type 2SB986Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies, relay drivers, lamp drivers,electrical
2sd1340.pdf
isc Silicon NPN Power Transistor 2SD1340DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
