All Transistors. 2SD1351 Datasheet

 

2SD1351 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1351
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220

 2SD1351 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1351 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
2sd1351.pdf

2SD1351
2SD1351

isc Silicon NPN Power Transistor 2SD1351DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 1.0V(Max)@ (I = 2A, I = 0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose

 8.1. Size:43K  panasonic
2sd1350 e.pdf

2SD1351
2SD1351

Transistor2SD1350, 2SD1350ASilicon NPN triple diffusion planer typeFor high breakdown voltage switchingUnit: mmFeaturesHigh collector to base voltage VCBO.6.9 0.1 2.5 0.11.5High collector to emitter voltage VCEO.1.5 R0.9 1.0 R0.9Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and man

 8.2. Size:39K  panasonic
2sd1350.pdf

2SD1351
2SD1351

Transistor2SD1350, 2SD1350ASilicon NPN triple diffusion planer typeFor high breakdown voltage switchingUnit: mmFeaturesHigh collector to base voltage VCBO.6.9 0.1 2.5 0.11.5High collector to emitter voltage VCEO.1.5 R0.9 1.0 R0.9Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and man

 8.3. Size:172K  inchange semiconductor
2sd1357.pdf

2SD1351
2SD1351

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1357DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB997Minimum Lot-to-Lot variations for robust deviceperformance and r

 8.4. Size:205K  inchange semiconductor
2sd1355.pdf

2SD1351
2SD1351

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1355DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB995Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended fo

 8.5. Size:188K  inchange semiconductor
2sd1358.pdf

2SD1351
2SD1351

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1358DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB998Minimum Lot-to-Lot variations for robust deviceperformance and re

 8.6. Size:208K  inchange semiconductor
2sd1352.pdf

2SD1351
2SD1351

isc Silicon NPN Power Transistor 2SD1352DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB989Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

Datasheet: 2SD1347U , 2SD1348 , 2SD1348R , 2SD1348S , 2SD1348T , 2SD1348U , 2SD1349 , 2SD1350 , KTB688 , 2SD1352 , 2SD1353 , 2SD1353BL , 2SD1353GR , 2SD1353V , 2SD1354 , 2SD1354GR , 2SD1354O .

 

 
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