All Transistors. 2SD1355Y Datasheet

 

2SD1355Y Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1355Y

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 12 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO220

2SD1355Y Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1355Y Datasheet (PDF)

4.1. 2sd1350.pdf Size:39K _panasonic

2SD1355Y
2SD1355Y

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual i

4.2. 2sd1350 e.pdf Size:43K _panasonic

2SD1355Y
2SD1355Y

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm Features High collector to base voltage VCBO. 6.9 0.1 2.5 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual i

 4.3. 2sd1352.pdf Size:140K _inchange_semiconductor

2SD1355Y
2SD1355Y

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-

4.4. 2sd1351.pdf Size:64K _inchange_semiconductor

2SD1355Y
2SD1355Y

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1351 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB988 ·Low collector saturation voltage APPLICATIONS ·For general purpose application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITION

Datasheet: 2SD1353V , 2SD1354 , 2SD1354GR , 2SD1354O , 2SD1354Y , 2SD1355 , 2SD1355O , 2SD1355R , 2N3904 , 2SD1356 , 2SD1356O , 2SD1356R , 2SD1356Y , 2SD1357 , 2SD1358 , 2SD1359 , 2SD136 .

 
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