All Transistors. 2SD1376K Datasheet

 

2SD1376K Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1376K

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 15000

Noise Figure, dB: -

Package: TO126

2SD1376K Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1376K Datasheet (PDF)

3.1. 2sd1376.pdf Size:33K _hitachi

2SD1376K
2SD1376K

2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 6 k? 0.5 k? 2 3 (Typ) (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEB

3.2. 2sd1376.pdf Size:113K _inchange_semiconductor

2SD1376K
2SD1376K

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1376 DESCRIPTION · ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER COND

 4.1. 2sd1378.pdf Size:234K _inchange_semiconductor

2SD1376K
2SD1376K

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1378 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 0.5A ·Complement to Type 2SB1007 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

4.2. 2sd1375.pdf Size:128K _inchange_semiconductor

2SD1376K
2SD1376K

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1375 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for line operated audio output amplifier ,and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbo

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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