All Transistors. 2SD1383WB Datasheet

 

2SD1383WB Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1383WB

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 4000

Noise Figure, dB: -

Package: SOT23

2SD1383WB Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1383WB Datasheet (PDF)

3.1. 2sb852k 2sa830s 2sd1383k 2sc1645s.pdf Size:52K _rohm

2SD1383WB
2SD1383WB

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are

3.2. 2sd1383k.pdf Size:141K _rohm

2SD1383WB
2SD1383WB

High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K ?Features ?Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD1383K 2) Built-in 4k? resistor between base and emitter. 3) Complements the 2SB852K. ?Packaging specifications Type 2SD1383K Package SMT3 hFE B Marking W ? (1)Emitter Code T146 (2)Base Basic ordering unit (pieces) 3000 (3)Collector Eac

 4.1. 2sd1380.pdf Size:108K _rohm

2SD1383WB

4.2. 2sd1381f.pdf Size:89K _rohm

2SD1383WB
2SD1383WB

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Features External dimensions (Units : mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 3) Good hFE linearity 1.5+0.2 1.60.1 -0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 0.4+0.1 -0.05 2SB1241 / 2SB1181

 4.3. 2sd1385.pdf Size:37K _panasonic

2SD1383WB
2SD1383WB

Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual inse

4.4. 2sd1385 e.pdf Size:41K _panasonic

2SD1383WB
2SD1383WB

Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual inse

 4.5. 2sd1380.pdf Size:120K _inchange_semiconductor

2SD1383WB
2SD1383WB

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1380 DESCRIPTION · ·With TO-126 package ·Complement to type 2SB1009 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PA

Datasheet: 2SD1378 , 2SD1379 , 2SD138 , 2SD1380 , 2SD1381 , 2SD1382 , 2SD1383 , 2SD1383WA , BU808DFI , 2SD1384 , 2SD1385 , 2SD1386 , 2SD1387 , 2SD1388 , 2SD1389 , 2SD139 , 2SD1390 .

 
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