All Transistors. 2SD1388 Datasheet

 

2SD1388 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1388

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO92

2SD1388 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1388 Datasheet (PDF)

8.1. 2sb852k 2sa830s 2sd1383k 2sc1645s.pdf Size:52K _rohm

2SD1388
2SD1388

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

8.2. 2sd1380.pdf Size:108K _rohm

2SD1388

 8.3. 2sd1383k.pdf Size:141K _rohm

2SD1388
2SD1388

High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD1383K2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K. Packaging specifications Type 2SD1383KPackage SMT3hFE BMarking W(1)EmitterCode T146(2)BaseBasic ordering unit (pieces) 3000 (3)C

8.4. 2sd1381f.pdf Size:89K _rohm

2SD1388
2SD1388

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381FTransistorsPower Transistor (80V, 1A)2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /2SD1381F Features External dimensions (Units : mm)1) High VCEO, VCEO=80V2SD18982) High IC, IC=1A (DC)4.5+0.2-0.13) Good hFE linearity 1.5+0.21.60.1 -0.14) Low VCE (sat)5) Complements the 2SB1260 /(1) (2) (3)0.4+0.1-0.05 2SB1241 / 2SB

 8.5. 2sd1385 e.pdf Size:41K _panasonic

2SD1388
2SD1388

Transistor2SD1385Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.85M type package allowing easy automatic and manual

8.6. 2sd1385.pdf Size:37K _panasonic

2SD1388
2SD1388

Transistor2SD1385Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.85M type package allowing easy automatic and manual

8.7. 2sd1380.pdf Size:212K _inchange_semiconductor

2SD1388
2SD1388

isc Silicon NPN Power Transistor 2SD1380DESCRIPTIONHigh Collector Current -I = 2ACCollector-Emitter Breakdown Voltage-: V = 32V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB1009Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier application

8.8. 2sd1386.pdf Size:201K _inchange_semiconductor

2SD1388
2SD1388

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1386DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 4AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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