All Transistors. 2SD1390 Datasheet

 

2SD1390 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1390
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220

 2SD1390 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1390 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
2sd1390.pdf

2SD1390 2SD1390

isc Silicon NPN Power Transistor 2SD1390DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150

 8.1. Size:43K  sanyo
2sd1399.pdf

2SD1390

 8.2. Size:80K  sanyo
2sd1395.pdf

2SD1390 2SD1390

 8.3. Size:42K  sanyo
2sd1396.pdf

2SD1390

 8.4. Size:69K  no
2sd1392.pdf

2SD1390 2SD1390

 8.5. Size:26K  wingshing
2sd1397.pdf

2SD1390

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR2SD1397COLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

 8.6. Size:204K  inchange semiconductor
2sd1393.pdf

2SD1390 2SD1390

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 0.8AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose am

 8.7. Size:215K  inchange semiconductor
2sd1398.pdf

2SD1390 2SD1390

isc Silicon NPN Power Transistor 2SD1398DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

 8.8. Size:215K  inchange semiconductor
2sd1399.pdf

2SD1390 2SD1390

isc Silicon NPN Power Transistor 2SD1399DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.9. Size:204K  inchange semiconductor
2sd1394.pdf

2SD1390 2SD1390

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1394DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 1.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp

 8.10. Size:205K  inchange semiconductor
2sd1395.pdf

2SD1390 2SD1390

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1395DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp

 8.11. Size:214K  inchange semiconductor
2sd1397.pdf

2SD1390 2SD1390

isc Silicon NPN Power Transistor 2SD1397DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 8.12. Size:212K  inchange semiconductor
2sd1391.pdf

2SD1390 2SD1390

isc Silicon NPN Power Transistor 2SD1391DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150

 8.13. Size:214K  inchange semiconductor
2sd1396.pdf

2SD1390 2SD1390

isc Silicon NPN Power Transistor 2SD1396DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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