2SD141 Datasheet, Equivalent, Cross Reference Search

2SD141 Transistor Equivalent Substitute - Cross-Reference Search

2SD141 Datasheet (PDF)

1.1. 2sd1414.pdf Size:62K _st

SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS .836 MHz .12.5 VOLTS .COMMON BASE .P 45 W MIN. WITH 4.7 dB GAIN = OUT .230 6LFL (M142) epoxy sealed ORDER CODE BRANDING SD1414 SD1414 PIN CONNECTION DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier ap- plications in the 806 - 866 MHz frequency range. Internal input

1.2. 2sd1410a.pdf Size:183K _toshiba



 1.3. 2sd1412a.pdf Size:216K _toshiba



1.4. 2sd1412.pdf Size:184K _toshiba



 1.5. 2sd1417.pdf Size:38K _toshiba



1.6. 2sd1411a.pdf Size:216K _toshiba



1.7. 2sd1415a.pdf Size:213K _toshiba



1.8. 2sd1410.pdf Size:163K _toshiba



1.9. 2sd1415.pdf Size:183K _toshiba



1.10. 2sd1411.pdf Size:184K _toshiba



1.11. rej03g0788 2sd1419ds-1.pdf Size:112K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.12. rej03g0787 2sd1418ds-1.pdf Size:112K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.13. 2sd1419.pdf Size:25K _hitachi

2SD1419 Silicon NPN Epitaxial Application � Low frequency power amplifier � Complementary pair with 2SB1026 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5V Collector curren

1.14. 2sd1418.pdf Size:31K _hitachi

2SD1418 Silicon NPN Epitaxial Application � Low frequency power amplifier � Complementary pair with 2SB1025 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5V Collector current

1.15. 2sd1413.pdf Size:68K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1023 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

1.16. 2sd1416.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 APPLICATIONS ·Hammer driver,pulse motor driv

1.17. 2sd1412.pdf Size:272K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) S

1.18. 2sd1417.pdf Size:70K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1022 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

1.19. 2sd1414.pdf Size:68K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

1.20. 2sd1415a.pdf Size:83K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter

1.21. 2sd1410.pdf Size:177K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS ·Igniter applications ·High voltage switching applicatio

1.22. 2sd1415.pdf Size:68K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1020 ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline

1.23. 2sd1411.pdf Size:171K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low saturation voltage Ў¤ Complementary to 2SB1018 APPLICATIONS Ў¤ Power amplifier applications Ў¤ High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC

1.24. 2sd1419.pdf Size:900K _kexin

SMD Type Transistors NPN Transistors 2SD1419 1.70 0.1 ■ Features ● Low frequency power amplifier ● Complementary to 2SB1026 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Conti

1.25. 2sd1418.pdf Size:905K _kexin

SMD Type Transistors NPN Transistors 2SD1418 ■ Features 1.70 0.1 ● Low frequency power amplifier ● Complementary to 2SB1025 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

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