All Transistors. 2SD1417 Datasheet

 

2SD1417 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1417
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO220F

 2SD1417 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1417 Datasheet (PDF)

 ..1. Size:38K  toshiba
2sd1417.pdf

2SD1417

 ..2. Size:212K  inchange semiconductor
2sd1417.pdf

2SD1417
2SD1417

isc Silicon NPN Darlington Power Transistor 2SD1417DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 3A)FE CE CLow Collector Saturation VoltageComplement to Type 2SB1022Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier and switchin

 8.1. Size:184K  toshiba
2sd1412.pdf

2SD1417
2SD1417

 8.2. Size:183K  toshiba
2sd1410a.pdf

2SD1417
2SD1417

 8.3. Size:183K  toshiba
2sd1415.pdf

2SD1417
2SD1417

 8.4. Size:163K  toshiba
2sd1410.pdf

2SD1417
2SD1417

 8.5. Size:216K  toshiba
2sd1412a.pdf

2SD1417
2SD1417

 8.6. Size:184K  toshiba
2sd1411.pdf

2SD1417
2SD1417

 8.7. Size:216K  toshiba
2sd1411a.pdf

2SD1417
2SD1417

 8.8. Size:213K  toshiba
2sd1415a.pdf

2SD1417
2SD1417

 8.9. Size:112K  renesas
rej03g0788 2sd1419ds-1.pdf

2SD1417
2SD1417

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:112K  renesas
rej03g0787 2sd1418ds-1.pdf

2SD1417
2SD1417

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.11. Size:31K  hitachi
2sd1418.pdf

2SD1417
2SD1417

2SD1418Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1025OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1418Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 5VCollector

 8.12. Size:25K  hitachi
2sd1419.pdf

2SD1417
2SD1417

2SD1419Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1026OutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1419Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 100 VEmitter to base voltage VEBO 5VCollecto

 8.13. Size:905K  kexin
2sd1418.pdf

2SD1417
2SD1417

SMD Type TransistorsNPN Transistors2SD1418 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB10250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

 8.14. Size:900K  kexin
2sd1419.pdf

2SD1417
2SD1417

SMD Type TransistorsNPN Transistors2SD14191.70 0.1 Features Low frequency power amplifier Complementary to 2SB10260.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Conti

 8.15. Size:215K  inchange semiconductor
2sd1412.pdf

2SD1417
2SD1417

isc Silicon NPN Power Transistor 2SD1412DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOComplement to Type 2SB1019Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

 8.16. Size:212K  inchange semiconductor
2sd1413.pdf

2SD1417
2SD1417

isc Silicon NPN Darlington Power Transistor 2SD1413DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1A, V = 2VFE C CEComplement to Type 2SB1023Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

 8.17. Size:218K  inchange semiconductor
2sd1414.pdf

2SD1417
2SD1417

isc Silicon NPN Darlington Power Transistor 2SD1414DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1A, V = 2VFE C CEComplement to Type 2SB1024Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

 8.18. Size:214K  inchange semiconductor
2sd1415.pdf

2SD1417
2SD1417

isc Silicon NPN Darlington Power Transistor 2SD1415DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB1020Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL

 8.19. Size:212K  inchange semiconductor
2sd1410.pdf

2SD1417
2SD1417

isc Silicon NPN Darlington Power Transistor 2SD1410DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-:V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicati

 8.20. Size:215K  inchange semiconductor
2sd1411.pdf

2SD1417
2SD1417

isc Silicon NPN Power Transistor 2SD1411DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1018Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.

 8.21. Size:209K  inchange semiconductor
2sd1415a.pdf

2SD1417
2SD1417

isc Silicon NPN Darlington Power Transistor 2SD1415ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switch

 8.22. Size:213K  inchange semiconductor
2sd1416.pdf

2SD1417
2SD1417

isc Silicon NPN Darlington Power Transistor 2SD1416DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB1021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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