2SD1430 Datasheet and Replacement

   Type Designator: 2SD1430
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 95 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO247

2SD1430 Substitution

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2SD1430 Datasheet (PDF)

..1. Size:49K toshiba
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..2. Size:191K inchange semiconductor
2sd1430.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1430DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

8.1. Size:100K toshiba
2sd1438.pdf pdf_icon

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8.2. Size:100K panasonic
2sd1439.pdf pdf_icon

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8.3. Size:320K hitachi
2sd1435k.pdf pdf_icon

8.4. Size:34K hitachi
2sd1436.pdf pdf_icon

2SD1436(K)Silicon NPN Triple DiffusedApplicationPower switching complementary pair with 2SB1032(K)OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 1.5 k 130 (Typ) (Typ)13232SD1436(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VE

8.5. Size:69K wingshing
2sd1437.pdf pdf_icon

2SD1437 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 40 W Juncti

8.6. Size:28K wingshing
2sd1432.pdf pdf_icon

NPN TRIPLE DIFFUSED2SD1432 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

8.7. Size:28K wingshing
2sd1431.pdf pdf_icon

NPN TRIPLE DIFFUSED2SD1431 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC

8.8. Size:27K wingshing
2sd1433.pdf pdf_icon

NPN TRIPLE DIFFUSED2SD1433 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) I

8.9. Size:209K inchange semiconductor
2sd1437.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1437DESCRIPTIONCollector-Emitter Breakdown Voltage:V = 60V(Min)(BR)CEOComplement to Type 2SB1033Low Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

8.10. Size:215K inchange semiconductor
2sd1439.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1439DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNI

8.11. Size:190K inchange semiconductor
2sd1432.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1432DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

8.12. Size:89K inchange semiconductor
2sd1435.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Complement to type 2SB1031 APPLICATIONS For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline

8.13. Size:216K inchange semiconductor
2sd1436.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1436DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 5A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATI

8.14. Size:215K inchange semiconductor
2sd1431.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1431DESCRIPTIONHigh Speedt = 1.0 us(MIN) @ I = 4A , I = 0.8Af C B(end)High VoltageV =1300VCBOLow Saturation VoltageV

8.15. Size:190K inchange semiconductor
2sd1433.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1433DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .