All Transistors. 2SD1435 Datasheet

 

2SD1435 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1435

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO3-P

2SD1435 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1435 Datasheet (PDF)

1.1. 2sd1435k.pdf Size:320K _hitachi

2SD1435
2SD1435

1.2. 2sd1435.pdf Size:89K _inchange_semiconductor

2SD1435
2SD1435

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

 4.1. 2sd1430.pdf Size:49K _toshiba

2SD1435

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4.2. 2sd1438.pdf Size:100K _toshiba

2SD1435
2SD1435

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 4.3. 2sd1439.pdf Size:100K _panasonic

2SD1435
2SD1435

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.4. 2sd1436.pdf Size:34K _hitachi

2SD1435
2SD1435

2SD1436(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1.5 k? 130 ? (Typ) (Typ) 1 3 2 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V C

 4.5. 2sd1431.pdf Size:28K _wingshing

2SD1435

NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5

4.6. 2sd1432.pdf Size:28K _wingshing

2SD1435

NPN TRIPLE DIFFUSED 2SD1432 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 6

4.7. 2sd1433.pdf Size:27K _wingshing

2SD1435

NPN TRIPLE DIFFUSED 2SD1433 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5

4.8. 2sd1437.pdf Size:69K _wingshing

2SD1435

2SD1437 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25? PC 40 W ? ? ? Junction Temperature Tj 1

4.9. 2sd1439.pdf Size:53K _inchange_semiconductor

2SD1435
2SD1435

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500

4.10. 2sd1431.pdf Size:92K _inchange_semiconductor

2SD1435
2SD1435

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1431 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV and CRT display horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitte

4.11. 2sd1430.pdf Size:92K _inchange_semiconductor

2SD1435
2SD1435

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1430 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maxi

4.12. 2sd1432.pdf Size:92K _inchange_semiconductor

2SD1435
2SD1435

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1432 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in TV and CRT display horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Abs

4.13. 2sd1433.pdf Size:92K _inchange_semiconductor

2SD1435
2SD1435

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1433 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in TV and CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute m

4.14. 2sd1436.pdf Size:258K _inchange_semiconductor

2SD1435
2SD1435

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1436 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 5A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB1032 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE

4.15. 2sd1437.pdf Size:238K _inchange_semiconductor

2SD1435
2SD1435

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1437 DESCRIPTION ·Collector-Emitter Breakdown Voltage :V(BR)CEO= 60V(Min) ·Complement to Type 2SB1033 ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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