2SD1465L PDF and Equivalents Search

 8.1. Size:325K  1

 2sd1834 2sd1468s 2sd1865.pdf

... See More ⇒

 8.2. Size:269K  1

 2sd1469 2sd1920.pdf

... See More ⇒

 8.3. Size:47K  rohm

 2sd1468.pdf

2SD1834 Transistors Transistors 2SD1468S / 2SD1865 (94S-340-D64) (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for re... See More ⇒

 8.4. Size:47K  secos

 2sd1468s.pdf

2SD1468S 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 1... See More ⇒

 8.5. Size:60K  secos

 2sd1468.pdf

2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.... See More ⇒

 8.6. Size:226K  lge

 2sd1468s.pdf

2SD1468S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low saturation voltage, typically Vce(sat)=0.006V Ideal for voltage, high current drives, High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V ... See More ⇒

 8.7. Size:236K  lge

 2sd1468.pdf

2SD1468(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage Dimensions in inches and (millimeters) VCEO 15 V Collector-E... See More ⇒

 8.8. Size:206K  inchange semiconductor

 2sd1466.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1466 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 8A CE(sat) C High DC Current Gain h = 200(Min) @ I = 15A, V = 3V FE C CE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance... See More ⇒