2SD15 Specs and Replacement
Type Designator: 2SD15
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
2SD15 Substitution
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2SD15 datasheet
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request... See More ⇒
2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit mm High collector current IC = 30 A High DC current gain hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol ... See More ⇒
DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High DC current gain due to Darlington connection Low collector saturation Reverse deterrence type Ideal for use in devices such as pulse motor drivers and relay drivers of PC terminals, a... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SD1588 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Mold package that does not require an insulating board or insulation bushing Large current capacity in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = 0.5 V MAX. (@5 A) Id... See More ⇒
DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT mm) collector saturation voltage and high voltage. This transistor is available for broad applications as variety of drives. FEATURES Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 300... See More ⇒
DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT mm) collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES Ultra high hFE hFE = 800 to 3200 (@ ... See More ⇒
Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit mm For low-frequency output amplification 1.5 0.1 4.5 0.1 1.6 0.2 Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 45 = 4000 to 2000. A shunt resistor is omitted from the driver. 0.4 0.08 0.4 0.04 Mini Power... See More ⇒
Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit mm For low-frequency output amplification 1.5 0.1 4.5 0.1 1.6 0.2 Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 45 = 4000 to 2000. A shunt resistor is omitted from the driver. 0.4 0.08 0.4 0.04 Mini Power... See More ⇒
Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer 3.1 0.1 ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink wi... See More ⇒
Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circ... See More ⇒
Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Unit mm Complementary to 2SB1071 and 2SB1071A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (T... See More ⇒
Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V 1.27 1.27 2.54 0.15 Emitter t... See More ⇒
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2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage VCEO 1000 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector power dissipation PC 1.8 W ... See More ⇒
2SD1559 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1079 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 3 k 400 (Typ) (Typ) 1 3 2 3 2SD1559 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltag... See More ⇒
2SD1504 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SD1504 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector peak current ic (peak) 1.0 A Collect... See More ⇒
2SD1521 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 2 k 0.5 k 2 3 (Typ) (Typ) 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7V Collector current IC 1.5 A Collector peak current IC (peak) 3.0 A Collector... See More ⇒
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1546 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) 2-16E3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current... See More ⇒
NPN TRIPLE DIFFUSED 2SD1545 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector... See More ⇒
Silicon Diffused Power Transistor 2SD1577 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in switching power circuites of colour television receivers TOP-3Fa QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM Co... See More ⇒
NPN TRIPLE DIFFUSED 2SD1556 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Co... See More ⇒
NPN TRIPLE DIFFUSED 2SD1547 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector... See More ⇒
NPN TRIPLE DIFFUSED 2SD1555 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current ... See More ⇒
NPN TRIPLE DIFFUSED 2SD1554 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current ... See More ⇒
Product Specification www.jmnic.com Silicon Power Transistors 2SD1589 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1098 Low speed switching APPLICATIONS Low frequency power amplifier Low speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIM... See More ⇒
Product Specification www.jmnic.com Silicon Power Transistors 2SD1594 DESCRIPTION With TO-220Fa package APPLICATIONS Low frequency power amplifier High speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO... See More ⇒
Product Specification www.jmnic.com Silicon Power Transistors 2SD1588 DESCRIPTION With TO-220Fa package Complement to type 2SB1097 Low speed switching APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARA... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS A... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1585 DESCRIPTION With TO-220Fa package VCEO 60V;VEBO 7V;IC(DC) 3.0A Complement to type 2SB1094 APPLICATIONS For use in audio frequency power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1555 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1553 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1554 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE ... See More ⇒
SMD Type SMD Type SMD Type Transistors SMD Type Transistors Product specification Product specification 2SD1583-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 Features +0.2 +0.8 5.30-0.2 0.50-0.7 Low VCE(sat). High hFE. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒
SMD Type SMD Type SMD Type Transistors SMD Type Transistors Product specification Product specification 2SD1584-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). High hFE. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒
SMD Type Transistors NPN Transistors 2SD1511 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=80V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Vo... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1503 DESCRIPTION High Collector-Base Voltage - V = 900V(Min) CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
isc Silicon NPN Power Transistor 2SD1506 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
isc Silicon NPN Power Transistor 2SD1563A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1086A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
isc Silicon NPN Power Transistor 2SD1546 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500... See More ⇒
isc Silicon NPN Power Transistor 2SD1545 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD157 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated co... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1589 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A FE C Complement to Type 2SB1098 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switc... See More ⇒
isc Silicon NPN Power Transistor 2SD1535 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 5... See More ⇒
isc Silicon NPN Power Transistor 2SD1577 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
isc Silicon NPN Power Transistor 2SD1587 DESCRIPTION High Collector Current I = 2.0A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 500mA CE(sat) C Complement to Type 2SB1096 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAX... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1549 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1523 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 500(Min) @ I = 8A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and... See More ⇒
isc Silicon NPN Power Transistor 2SD1544 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1542 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A FE C Complement to Type 2SB1099 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switc... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD155 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appli... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1592 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High DC Current Gain h = 400(Min) @ I = 2A, V = 2V FE C CE Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD1540 DESCRIPTION High DC current gain- h = 800 (Min) @ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier and switching... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1550 DESCRIPTION High Breakdown Voltage- V = 1000V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1559 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 10A, V = 3V FE C CE High Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type 2SB1079 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power ... See More ⇒
isc Silicon NPN Power Transistor 2SD1533 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 5... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1514 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @ I = 10A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and... See More ⇒
isc Silicon NPN Power Transistor 2SD1594 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U... See More ⇒
isc Silicon NPN Power Transistor 2SD1588 DESCRIPTION Large Current Capacity- I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Complement to Type 2SB1097 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power... See More ⇒
isc Silicon NPN Power Transistor 2SD1543 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500... See More ⇒
isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,power switching appli... See More ⇒
isc Silicon NPN Power Transistor 2SD1571 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V (Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching applications. ABSOLUTE MAXIMUM RA... See More ⇒
isc Silicon NPN Power Transistor 2SD1575 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1552 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
isc Silicon NPN Power Transistor 2SD1516 DESCRIPTION Low Collector Saturation Voltage Good Linearity of h FE High Switching Speed High I C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier ,power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-... See More ⇒
isc Silicon NPN Power Transistor 2SD1517 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,power switching appli... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1500 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 10A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1591 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 10A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 10A FE C Complement to Type 2SB1100 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed hig... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1515 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @ I = 10A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and... See More ⇒
isc Silicon NPN Power Transistor 2SD1547 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
isc Silicon NPN Power Transistor 2SD1585 DESCRIPTION High Collector Current I = 3A C Low Collector Saturation Voltage V = 1.5V(Max)@I = 2A CE(sat) C Complement to Type 2SB1094 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM ... See More ⇒
isc Silicon NPN Power Transistor 2SD1541 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
isc Silicon NPN Power Transistor 2SD1555 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1564 DESCRIPTION Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @I = 2A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audi... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 500(Min) @ I = 5A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and... See More ⇒
isc Silicon NPN Power Transistor 2SD1518 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-B... See More ⇒
isc Silicon NPN Power Transistor 2SD1528 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,power switching appli... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1599 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... See More ⇒
isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1300V (Min.) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1510 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @ I = 3A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM R... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1525 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 20A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1565 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications. ABSOLUTE ... See More ⇒
isc Silicon NPN Power Transistor 2SD1562 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1085 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
isc Silicon NPN Power Transistor 2SD1553 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1566 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 10A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching ... See More ⇒
isc Silicon NPN Power Transistor 2SD1548 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1532 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @ I = 2A, V = 4V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low ... See More ⇒
isc Silicon NPN Power Transistor 2SD1505 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
isc Silicon NPN Power Transistor 2SD1580 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 4A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIM... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1597 DESCRIPTION Collector Current -I = 30A C High DC Current Gain- h = 1000(Min)@ I = 15A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. AB... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1524 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 300(Min) @ I = 5A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SD1551 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1509 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I =1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp... See More ⇒
isc Silicon NPN Power Transistor 2SD1563 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1086 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
isc Silicon NPN Power Transistor 2SD1554 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ... See More ⇒
Detailed specifications: 2SD1492, 2SD1493, 2SD1494, 2SD1495, 2SD1496, 2SD1497, 2SD1498, 2SD1499, BC548, 2SD150, 2SD1500, 2SD1501, 2SD1502, 2SD1503, 2SD1504, 2SD1505, 2SD1506
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