2SD15 Datasheet and Replacement

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit: mm High collector current: IC = 30 A High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

DATA SHEETDARLINGTON POWER TRANSISTOR2SD1592NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-VOLTAGE LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Low collector saturation Reverse deterrence type Ideal for use in devices such as pulse motor drivers and relaydrivers of PC terminals, a

DATA SHEETSILICON POWER TRANSISTOR2SD1588NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Mold package that does not require an insulating board orinsulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A) Id

DATA SHEETSILICON TRANSISTOR2SD1582NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSThe 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and high voltage. This transistor isavailable for broad applications as variety of drives.FEATURES Ultra high hFEhFE = 800 to 3200 (@ VCE = 5.0 V, IC = 300

DATA SHEETSILICON TRANSISTOR2SD1581NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSThe 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and low power loss. This transistor isideal for use in high current drives such as mortars, relays, andramps.FEATURES Ultra high hFEhFE = 800 to 3200 (@

Transistor2SD1511Silicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency output amplification1.5 0.14.5 0.11.6 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE45= 4000 to 2000.A shunt resistor is omitted from the driver.0.4 0.080.4 0.04Mini Power

Transistor2SD1511Silicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency output amplification1.5 0.14.5 0.11.6 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE45= 4000 to 2000.A shunt resistor is omitted from the driver.0.4 0.080.4 0.04Mini Power

Power Transistors2SD1535Silicon NPN triple diffusion planar type DarlingtonFor high power amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesExtremely satisfactory linearity of the forward current transfer 3.1 0.1ratio hFEHigh collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink wi

Power Transistors2SD1538, 2SD1538ASilicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For low-voltage switching6.0 0.5 1.0 0.1Complementary to 2SB1070 and 2SB1070AFeatures Low collector to emitter saturation voltage VCE(sat)1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circ

Power Transistors2SD1539, 2SD1539ASilicon NPN epitaxial planar typeFor low-voltage switchingUnit: mmComplementary to 2SB1071 and 2SB1071A10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum Ratings (T

Transistor2SD1512Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesAllowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 V 1.27 1.272.54 0.15Emitter t

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2SD1527Silicon NPN Triple DiffusedApplicationHigh voltage power amplifierOutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 1000 VCollector to emitter voltage VCEO 1000 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector power dissipation PC 1.8 W

2SD1559Silicon NPN Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SB1079OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 3 k 400 (Typ) (Typ)13232SD1559Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 VEmitter to base voltag

2SD1504Silicon NPN EpitaxialApplicationLow frequency amplifier, MutingOutlineSPAK1. Emitter122. Collector33. Base2SD1504Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector peak current ic (peak) 1.0 ACollect

2SD1521Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. Emitter ID2. Collector3. Base12 k 0.5 k23(Typ) (Typ)1Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 7VCollector current IC 1.5 ACollector peak current IC (peak) 3.0 ACollector

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1546COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) 2-16E3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current

NPN TRIPLE DIFFUSED2SD1545 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

Silicon Diffused Power Transistor2SD1577GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in switching power circuites of colour television receiversTOP-3FaQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCESMCo

NPN TRIPLE DIFFUSED2SD1556 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Co

NPN TRIPLE DIFFUSED2SD1547 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

NPN TRIPLE DIFFUSED2SD1555 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

NPN TRIPLE DIFFUSED2SD1554 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

Product Specification www.jmnic.com Silicon Power Transistors 2SD1589 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1098 Low speed switching APPLICATIONS Low frequency power amplifier Low speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIM

Product Specification www.jmnic.com Silicon Power Transistors 2SD1594 DESCRIPTION With TO-220Fa package APPLICATIONS Low frequency power amplifier High speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

Product Specification www.jmnic.comSilicon Power Transistors 2SD1588 DESCRIPTION With TO-220Fa package Complement to type 2SB1097 Low speed switching APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARA

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1585 DESCRIPTION With TO-220Fa package VCEO60V;VEBO7V;IC(DC)3.0A Complement to type 2SB1094 APPLICATIONS For use in audio frequency power amplifier and general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector 3 EmitterFig.1 simplified outline (TO-220Fa) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1555 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1553 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1554 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

SMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specificationProduct specification2SD1583-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1Features+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).High hFE.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specificationProduct specification2SD1584-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).High hFE.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN Transistors2SD1511SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=80VC0.42 0.10.46 0.1B1.Base2.CollectorE3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Vo

isc Product Specificationisc Silicon NPN Power Transistor 2SD1503DESCRIPTION High Collector-Base Voltage -: V = 900V(Min)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power amplifier and power switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SD1506DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1065Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Power Transistor 2SD1563ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

isc Silicon NPN Power Transistor 2SD1546DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

isc Silicon NPN Power Transistor 2SD1545DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated co

isc Silicon NPN Darlington Power Transistor 2SD1589DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2AFE CComplement to Type 2SB1098Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc

isc Silicon NPN Power Transistor 2SD1535DESCRIPTIONCollector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 5

isc Silicon NPN Power Transistor 2SD1577DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD1587DESCRIPTIONHigh Collector Current:: I = 2.0ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 500mACE(sat) CComplement to Type 2SB1096Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAX

isc Product Specificationisc Silicon NPN Power Transistor 2SD1549DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1523DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 8A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

isc Silicon NPN Power Transistor 2SD1544DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Darlington Power Transistor 2SD1590DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3AFE CComplement to Type 2SB1099Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD155DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appli

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1592DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current Gain: h = 400(Min) @ I = 2A, V = 2VFE C CELow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD1540DESCRIPTIONHigh DC current gain-h = 800 (Min) @ I = 0.5AFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier and switching

isc Product Specificationisc Silicon NPN Power Transistor 2SD1550DESCRIPTIONHigh Breakdown Voltage-: V = 1000V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1559DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 10A, V = 3VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type 2SB1079Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power

isc Silicon NPN Power Transistor 2SD1533DESCRIPTIONCollector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 5

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1514DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 10A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and

isc Silicon NPN Power Transistor 2SD1594DESCRIPTIONGood Linearity of hFECollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SD1588DESCRIPTIONLarge Current Capacity- I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Complement to Type 2SB1097Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power

isc Silicon NPN Power Transistor 2SD1543DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

isc Silicon NPN Power Transistor 2SD1530DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli

isc Silicon NPN Power Transistor 2SD1571DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 800V (Min)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SD1575DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh Switching SpeedHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Product Specificationisc Silicon NPN Power Transistor 2SD1552DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(

isc Silicon NPN Power Transistor 2SD1516DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedHigh ICMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier ,power switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1572DESCRIPTION High DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Power Transistor 2SD1517DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli

isc Silicon NPN Darlington Power Transistor 2SD1500DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1558DESCRIPTION High DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1556 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter

isc Silicon NPN Darlington Power Transistor 2SD1591DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 10AFE CComplement to Type 2SB1100Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed hig

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1515DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 10A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and

isc Silicon NPN Power Transistor 2SD1547DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SD1585DESCRIPTIONHigh Collector Current:: I = 3ACLow Collector Saturation Voltage: V = 1.5V(Max)@I = 2ACE(sat) CComplement to Type 2SB1094Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SD1541DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1555DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1564DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audi

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1522DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

isc Silicon NPN Power Transistor 2SD1518DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

isc Silicon NPN Power Transistor 2SD1528DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1599DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Power Transistor 2SD1576DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1300V (Min.)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1510DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM R

isc Silicon NPN Darlington Power Transistor 2SD1525DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 20AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD1531DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF output amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon NPN Darlington Power Transistor 2SD1565DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLUTE

isc Silicon NPN Power Transistor 2SD1562DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1085Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD1553DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1566DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching

isc Silicon NPN Power Transistor 2SD1548DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1532DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 4VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low

isc Silicon NPN Power Transistor 2SD1505DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Power Transistor 2SD1580DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 4ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIM

isc Silicon NPN Darlington Power Transistor 2SD1597DESCRIPTIONCollector Current -I = 30ACHigh DC Current Gain-: h = 1000(Min)@ I = 15AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.AB

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1524DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 300(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

isc Product Specificationisc Silicon NPN Power Transistor 2SD1551DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(

isc Silicon NPN Darlington Power Transistor 2SD1509DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I =1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp

isc Silicon NPN Power Transistor 2SD1563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD1554DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25