2SD1501 PDF Specs and Replacements, Transistor Equivalent Finder, Cross Reference

2SD1501 PDF Specs and Replacement

   Type Designator: 2SD1501
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT23

2SD1501 Substitution

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2SD1501 PDF detailed specifications

8.1. Size:65K 1
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8.5. Size:33K hitachi
2sd1504.pdf pdf_icon

2SD1504 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SD1504 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector peak current ic (peak) 1.0 A Collect... See More ⇒

8.6. Size:187K inchange semiconductor
2sd1503.pdf pdf_icon

isc Product Specification isc Silicon NPN Power Transistor 2SD1503 DESCRIPTION High Collector-Base Voltage - V = 900V(Min) CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

8.7. Size:212K inchange semiconductor
2sd1506.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1506 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

8.8. Size:210K inchange semiconductor
2sd1500.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1500 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 10A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

8.9. Size:213K inchange semiconductor
2sd1505.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1505 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

8.10. Size:211K inchange semiconductor
2sd1509.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1509 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I =1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp... See More ⇒

Detailed specifications: 2SD1495 , 2SD1496 , 2SD1497 , 2SD1498 , 2SD1499 , 2SD15 , 2SD150 , 2SD1500 , BC337 , 2SD1502 , 2SD1503 , 2SD1504 , 2SD1505 , 2SD1506 , 2SD1507M , 2SD1508 , 2SD1509 .