All Transistors. 2SD1501 Datasheet

 

2SD1501 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1501

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT23

2SD1501 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1501 Datasheet (PDF)

8.1. 2sd1508.pdf Size:216K _toshiba

2SD1501
2SD1501

8.2. 2sd1509.pdf Size:184K _toshiba

2SD1501
2SD1501

 8.3. 2sd1506.pdf Size:43K _rohm

2SD1501

8.4. 2sd1504.pdf Size:33K _hitachi

2SD1501
2SD1501

2SD1504Silicon NPN EpitaxialApplicationLow frequency amplifier, MutingOutlineSPAK1. Emitter122. Collector33. Base2SD1504Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector peak current ic (peak) 1.0 ACollect

 8.5. 2sd1505.pdf Size:213K _inchange_semiconductor

2SD1501
2SD1501

isc Silicon NPN Power Transistor 2SD1505DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

8.6. 2sd1506.pdf Size:212K _inchange_semiconductor

2SD1501
2SD1501

isc Silicon NPN Power Transistor 2SD1506DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1065Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

8.7. 2sd1503.pdf Size:187K _inchange_semiconductor

2SD1501
2SD1501

isc Product Specificationisc Silicon NPN Power Transistor 2SD1503DESCRIPTION High Collector-Base Voltage -: V = 900V(Min)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power amplifier and power switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

8.8. 2sd1509.pdf Size:211K _inchange_semiconductor

2SD1501
2SD1501

isc Silicon NPN Darlington Power Transistor 2SD1509DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I =1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp

8.9. 2sd1500.pdf Size:210K _inchange_semiconductor

2SD1501
2SD1501

isc Silicon NPN Darlington Power Transistor 2SD1500DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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