All Transistors. 2SD1526 Datasheet

 

2SD1526 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1526
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200(typ) MHz
   Collector Capacitance (Cc): 30(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SC71

 2SD1526 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1526 Datasheet (PDF)

 ..1. Size:258K  1
2sd1526.pdf

2SD1526
2SD1526

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

 8.1. Size:175K  toshiba
2sd1525.pdf

2SD1526
2SD1526

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit: mm High collector current: IC = 30 A High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

 8.2. Size:32K  hitachi
2sd1527.pdf

2SD1526
2SD1526

2SD1527Silicon NPN Triple DiffusedApplicationHigh voltage power amplifierOutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 1000 VCollector to emitter voltage VCEO 1000 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector power dissipation PC 1.8 W

 8.3. Size:373K  hitachi
2sd1520.pdf

2SD1526
2SD1526

 8.4. Size:34K  hitachi
2sd1521.pdf

2SD1526
2SD1526

2SD1521Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. Emitter ID2. Collector3. Base12 k 0.5 k23(Typ) (Typ)1Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 7VCollector current IC 1.5 ACollector peak current IC (peak) 3.0 ACollector

 8.5. Size:209K  inchange semiconductor
2sd1523.pdf

2SD1526
2SD1526

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1523DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 8A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

 8.6. Size:206K  inchange semiconductor
2sd1522.pdf

2SD1526
2SD1526

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1522DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

 8.7. Size:214K  inchange semiconductor
2sd1528.pdf

2SD1526
2SD1526

isc Silicon NPN Power Transistor 2SD1528DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli

 8.8. Size:213K  inchange semiconductor
2sd1525.pdf

2SD1526
2SD1526

isc Silicon NPN Darlington Power Transistor 2SD1525DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 20AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 8.9. Size:206K  inchange semiconductor
2sd1524.pdf

2SD1526
2SD1526

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1524DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 300(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top