All Transistors. 2SD1534 Datasheet

 

2SD1534 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1534

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1200

Noise Figure, dB: -

Package: TO218

2SD1534 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1534 Datasheet (PDF)

4.1. 2sd1536m.pdf Size:48K _rohm

2SD1534

4.2. 2sd1538.pdf Size:57K _panasonic

2SD1534
2SD1534

Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit boar

 4.3. 2sd1535.pdf Size:65K _panasonic

2SD1534
2SD1534

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer ? 3.1 0.1 ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with 1.3

4.4. 2sd1539.pdf Size:54K _panasonic

2SD1534
2SD1534

Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Unit: mm Complementary to 2SB1071 and 2SB1071A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching ? 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (TC=25?C)

 4.5. 2sd1531.pdf Size:266K _inchange_semiconductor

2SD1534
2SD1534

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V

4.6. 2sd1535.pdf Size:73K _inchange_semiconductor

2SD1534
2SD1534

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1535 DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTON APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL P

4.7. 2sd1530.pdf Size:273K _inchange_semiconductor

2SD1534
2SD1534

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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