2SD1534 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1534
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1200
Noise Figure, dB: -
Package: TO218
2SD1534 Transistor Equivalent Substitute - Cross-Reference Search
2SD1534 Datasheet (PDF)
2sd1535.pdf
Power Transistors2SD1535Silicon NPN triple diffusion planar type DarlingtonFor high power amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesExtremely satisfactory linearity of the forward current transfer 3.1 0.1ratio hFEHigh collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink wi
2sd1538.pdf
Power Transistors2SD1538, 2SD1538ASilicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For low-voltage switching6.0 0.5 1.0 0.1Complementary to 2SB1070 and 2SB1070AFeatures Low collector to emitter saturation voltage VCE(sat)1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circ
2sd1539.pdf
Power Transistors2SD1539, 2SD1539ASilicon NPN epitaxial planar typeFor low-voltage switchingUnit: mmComplementary to 2SB1071 and 2SB1071A10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum Ratings (T
2sd1535.pdf
isc Silicon NPN Power Transistor 2SD1535DESCRIPTIONCollector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 5
2sd1533.pdf
isc Silicon NPN Power Transistor 2SD1533DESCRIPTIONCollector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 5
2sd1530.pdf
isc Silicon NPN Power Transistor 2SD1530DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli
2sd1531.pdf
isc Silicon NPN Power Transistor 2SD1531DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF output amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
2sd1532.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1532DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 4VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
