2SD1541 Datasheet and Replacement

   Type Designator: 2SD1541
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO126

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2SD1541 Datasheet (PDF)

..1. Size:110K panasonic
2sd1541.pdf pdf_icon

..2. Size:210K inchange semiconductor
2sd1541.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1541DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

8.1. Size:50K toshiba
2sd1548.pdf pdf_icon

8.2. Size:31K wingshing
2sd1546.pdf pdf_icon

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1546COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) 2-16E3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current

8.3. Size:69K wingshing
2sd1545.pdf pdf_icon

NPN TRIPLE DIFFUSED2SD1545 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

8.4. Size:70K wingshing
2sd1547.pdf pdf_icon

NPN TRIPLE DIFFUSED2SD1547 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

8.5. Size:215K inchange semiconductor
2sd1546.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1546DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

8.6. Size:215K inchange semiconductor
2sd1545.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1545DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

8.7. Size:190K inchange semiconductor
2sd1549.pdf pdf_icon

isc Product Specificationisc Silicon NPN Power Transistor 2SD1549DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM

8.8. Size:215K inchange semiconductor
2sd1544.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1544DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

8.9. Size:202K inchange semiconductor
2sd1542.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

8.10. Size:180K inchange semiconductor
2sd1540.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD1540DESCRIPTIONHigh DC current gain-h = 800 (Min) @ I = 0.5AFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier and switching

8.11. Size:215K inchange semiconductor
2sd1543.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1543DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

8.12. Size:215K inchange semiconductor
2sd1547.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1547DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

8.13. Size:215K inchange semiconductor
2sd1548.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1548DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .