2SD1565 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1565
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8000
Noise Figure, dB: -
Package: TO220
2SD1565 Transistor Equivalent Substitute - Cross-Reference Search
2SD1565 Datasheet (PDF)
2sd1565.pdf
isc Silicon NPN Darlington Power Transistor 2SD1565DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLUTE
2sd1563a.pdf
isc Silicon NPN Power Transistor 2SD1563ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sd1564.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1564DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audi
2sd1562.pdf
isc Silicon NPN Power Transistor 2SD1562DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1085Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sd1566.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1566DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching
2sd1563.pdf
isc Silicon NPN Power Transistor 2SD1563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sd1562 2sd1562a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
