All Transistors. 2SD1574 Datasheet

 

2SD1574 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1574
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO218

 2SD1574 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1574 Datasheet (PDF)

 8.1. Size:124K  nec
2sd1579.pdf

2SD1574
2SD1574

 8.2. Size:93K  panasonic
2sd1576.pdf

2SD1574
2SD1574

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:35K  no
2sd1571.pdf

2SD1574

 8.4. Size:138K  wingshing
2sd1577.pdf

2SD1574

Silicon Diffused Power Transistor2SD1577GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in switching power circuites of colour television receiversTOP-3FaQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCESMCo

 8.5. Size:180K  inchange semiconductor
2sd157.pdf

2SD1574
2SD1574

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated co

 8.6. Size:210K  inchange semiconductor
2sd1577.pdf

2SD1574
2SD1574

isc Silicon NPN Power Transistor 2SD1577DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 8.7. Size:209K  inchange semiconductor
2sd1571.pdf

2SD1574
2SD1574

isc Silicon NPN Power Transistor 2SD1571DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 800V (Min)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching applications.ABSOLUTE MAXIMUM RA

 8.8. Size:209K  inchange semiconductor
2sd1575.pdf

2SD1574
2SD1574

isc Silicon NPN Power Transistor 2SD1575DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh Switching SpeedHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

 8.9. Size:205K  inchange semiconductor
2sd1572.pdf

2SD1574
2SD1574

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1572DESCRIPTION High DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

 8.10. Size:209K  inchange semiconductor
2sd1576.pdf

2SD1574
2SD1574

isc Silicon NPN Power Transistor 2SD1576DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1300V (Min.)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top