2SD1578 Specs and Replacement
Type Designator: 2SD1578
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 550
Noise Figure, dB: -
Package: TO92MOD
- BJT ⓘ Cross-Reference Search
2SD1578 datasheet
8.2. Size:93K panasonic
2sd1576.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.4. Size:138K wingshing
2sd1577.pdf
Silicon Diffused Power Transistor 2SD1577 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in switching power circuites of colour television receivers TOP-3Fa QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM Co... See More ⇒
8.5. Size:180K inchange semiconductor
2sd157.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD157 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated co... See More ⇒
8.6. Size:210K inchange semiconductor
2sd1577.pdf
isc Silicon NPN Power Transistor 2SD1577 DESCRIPTION High Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
8.7. Size:209K inchange semiconductor
2sd1571.pdf
isc Silicon NPN Power Transistor 2SD1571 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V (Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching applications. ABSOLUTE MAXIMUM RA... See More ⇒
8.8. Size:209K inchange semiconductor
2sd1575.pdf
isc Silicon NPN Power Transistor 2SD1575 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
8.10. Size:209K inchange semiconductor
2sd1576.pdf
isc Silicon NPN Power Transistor 2SD1576 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1300V (Min.) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
Detailed specifications: 2SD157, 2SD1571, 2SD1572, 2SD1573, 2SD1574, 2SD1575, 2SD1576, 2SD1577, BD222, 2SD1579, 2SD157F, 2SD158, 2SD1580, 2SD1581, 2SD1582, 2SD1583, 2SD1584
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