2SD1578 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1578
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 550
Noise Figure, dB: -
Package: TO92MOD
2SD1578 Transistor Equivalent Substitute - Cross-Reference Search
2SD1578 Datasheet (PDF)
2sd1576.pdf
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2sd1577.pdf
Silicon Diffused Power Transistor2SD1577GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in switching power circuites of colour television receiversTOP-3FaQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCESMCo
2sd157.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 50mACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated co
2sd1577.pdf
isc Silicon NPN Power Transistor 2SD1577DESCRIPTIONHigh Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd1571.pdf
isc Silicon NPN Power Transistor 2SD1571DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 800V (Min)(BR)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching applications.ABSOLUTE MAXIMUM RA
2sd1575.pdf
isc Silicon NPN Power Transistor 2SD1575DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh Switching SpeedHigh ReliabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
2sd1572.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1572DESCRIPTION High DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
2sd1576.pdf
isc Silicon NPN Power Transistor 2SD1576DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1300V (Min.)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
