All Transistors. 2SD1582 Datasheet

 

2SD1582 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1582
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 800
   Noise Figure, dB: -
   Package: SP8

 2SD1582 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1582 Datasheet (PDF)

 ..1. Size:104K  nec
2sd1582.pdf

2SD1582 2SD1582

DATA SHEETSILICON TRANSISTOR2SD1582NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSThe 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and high voltage. This transistor isavailable for broad applications as variety of drives.FEATURES Ultra high hFEhFE = 800 to 3200 (@ VCE = 5.0 V, IC = 300

 8.1. Size:102K  nec
2sd1588.pdf

2SD1582 2SD1582

DATA SHEETSILICON POWER TRANSISTOR2SD1588NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Mold package that does not require an insulating board orinsulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A) Id

 8.2. Size:166K  nec
2sd1585.pdf

2SD1582 2SD1582

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2sd1584.pdf

2SD1582 2SD1582

 8.4. Size:104K  nec
2sd1581.pdf

2SD1582 2SD1582

DATA SHEETSILICON TRANSISTOR2SD1581NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSThe 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING (UNIT: mm)collector saturation voltage and low power loss. This transistor isideal for use in high current drives such as mortars, relays, andramps.FEATURES Ultra high hFEhFE = 800 to 3200 (@

 8.5. Size:220K  nec
2sd1583.pdf

2SD1582 2SD1582

 8.6. Size:44K  rohm
2sd1580.pdf

2SD1582

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2sd1589.pdf

2SD1582 2SD1582

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2sd1586.pdf

2SD1582

 8.9. Size:117K  jmnic
2sd1589.pdf

2SD1582 2SD1582

Product Specification www.jmnic.com Silicon Power Transistors 2SD1589 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1098 Low speed switching APPLICATIONS Low frequency power amplifier Low speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIM

 8.10. Size:113K  jmnic
2sd1588.pdf

2SD1582 2SD1582

Product Specification www.jmnic.comSilicon Power Transistors 2SD1588 DESCRIPTION With TO-220Fa package Complement to type 2SB1097 Low speed switching APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARA

 8.11. Size:116K  jmnic
2sd1585.pdf

2SD1582 2SD1582

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1585 DESCRIPTION With TO-220Fa package VCEO60V;VEBO7V;IC(DC)3.0A Complement to type 2SB1094 APPLICATIONS For use in audio frequency power amplifier and general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector 3 EmitterFig.1 simplified outline (TO-220Fa) and symbol

 8.12. Size:227K  tysemi
2sd1583-z.pdf

2SD1582 2SD1582

SMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specificationProduct specification2SD1583-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1Features+0.2 +0.85.30-0.2 0.50-0.7Low VCE(sat).High hFE.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 8.13. Size:227K  tysemi
2sd1584-z.pdf

2SD1582 2SD1582

SMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specificationProduct specification2SD1584-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesLow VCE(sat).High hFE.0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 8.14. Size:217K  inchange semiconductor
2sd1589.pdf

2SD1582 2SD1582

isc Silicon NPN Darlington Power Transistor 2SD1589DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2AFE CComplement to Type 2SB1098Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc

 8.15. Size:274K  inchange semiconductor
2sd1587.pdf

2SD1582 2SD1582

isc Silicon NPN Power Transistor 2SD1587DESCRIPTIONHigh Collector Current:: I = 2.0ACLow Collector Saturation Voltage: V = 1.0V(Max)@I = 500mACE(sat) CComplement to Type 2SB1096Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAX

 8.16. Size:215K  inchange semiconductor
2sd1588.pdf

2SD1582 2SD1582

isc Silicon NPN Power Transistor 2SD1588DESCRIPTIONLarge Current Capacity- I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Complement to Type 2SB1097Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power

 8.17. Size:216K  inchange semiconductor
2sd1585.pdf

2SD1582 2SD1582

isc Silicon NPN Power Transistor 2SD1585DESCRIPTIONHigh Collector Current:: I = 3ACLow Collector Saturation Voltage: V = 1.5V(Max)@I = 2ACE(sat) CComplement to Type 2SB1094Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIMUM

 8.18. Size:214K  inchange semiconductor
2sd1580.pdf

2SD1582 2SD1582

isc Silicon NPN Power Transistor 2SD1580DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 4ACE(sat) CHigh Collector Power DissipationGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC2402 | AC142-4 | AC134 | 2SD1683S

 

 
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