2SD1588Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1588Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
2SD1588Y Transistor Equivalent Substitute - Cross-Reference Search
2SD1588Y Datasheet (PDF)
2sd1588.pdf
DATA SHEETSILICON POWER TRANSISTOR2SD1588NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Mold package that does not require an insulating board orinsulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A) Id
2sd1588.pdf
Product Specification www.jmnic.comSilicon Power Transistors 2SD1588 DESCRIPTION With TO-220Fa package Complement to type 2SB1097 Low speed switching APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARA
2sd1588.pdf
isc Silicon NPN Power Transistor 2SD1588DESCRIPTIONLarge Current Capacity- I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Complement to Type 2SB1097Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
