All Transistors. 2SD159 Datasheet

 

2SD159 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD159
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO66

 2SD159 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD159 Datasheet (PDF)

 0.1. Size:89K  nec
2sd1592.pdf

2SD159
2SD159

DATA SHEETDARLINGTON POWER TRANSISTOR2SD1592NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-VOLTAGE LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Low collector saturation Reverse deterrence type Ideal for use in devices such as pulse motor drivers and relaydrivers of PC terminals, a

 0.2. Size:66K  no
2sd1590.pdf

2SD159
2SD159

 0.3. Size:30K  no
2sd1593.pdf

2SD159

 0.4. Size:33K  no
2sd1591.pdf

2SD159

 0.5. Size:25K  no
2sd1595.pdf

2SD159

 0.6. Size:118K  jmnic
2sd1594.pdf

2SD159
2SD159

Product Specification www.jmnic.com Silicon Power Transistors 2SD1594 DESCRIPTION With TO-220Fa package APPLICATIONS Low frequency power amplifier High speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

 0.7. Size:107K  jmnic
2sd1591.pdf

2SD159
2SD159

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS A

 0.8. Size:217K  inchange semiconductor
2sd1590.pdf

2SD159
2SD159

isc Silicon NPN Darlington Power Transistor 2SD1590DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3AFE CComplement to Type 2SB1099Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc

 0.9. Size:193K  inchange semiconductor
2sd1592.pdf

2SD159
2SD159

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1592DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current Gain: h = 400(Min) @ I = 2A, V = 2VFE C CELow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

 0.10. Size:215K  inchange semiconductor
2sd1594.pdf

2SD159
2SD159

isc Silicon NPN Power Transistor 2SD1594DESCRIPTIONGood Linearity of hFECollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE U

 0.11. Size:216K  inchange semiconductor
2sd1591.pdf

2SD159
2SD159

isc Silicon NPN Darlington Power Transistor 2SD1591DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 10AFE CComplement to Type 2SB1100Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed hig

 0.12. Size:186K  inchange semiconductor
2sd1599.pdf

2SD159
2SD159

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1599DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

 0.13. Size:215K  inchange semiconductor
2sd1597.pdf

2SD159
2SD159

isc Silicon NPN Darlington Power Transistor 2SD1597DESCRIPTIONCollector Current -I = 30ACHigh DC Current Gain-: h = 1000(Min)@ I = 15AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.AB

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: A933

 

 
Back to Top