2SD159 Datasheet and Replacement

   Type Designator: 2SD159
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO66

2SD159 Substitution

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2SD159 Datasheet (PDF)

0.1. Size:89K nec
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DATA SHEETDARLINGTON POWER TRANSISTOR2SD1592NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-VOLTAGE LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Low collector saturation Reverse deterrence type Ideal for use in devices such as pulse motor drivers and relaydrivers of PC terminals, a

0.2. Size:66K no
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0.6. Size:118K jmnic
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Product Specification www.jmnic.com Silicon Power Transistors 2SD1594 DESCRIPTION With TO-220Fa package APPLICATIONS Low frequency power amplifier High speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

0.7. Size:107K jmnic
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS A

0.8. Size:217K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor 2SD1590DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3AFE CComplement to Type 2SB1099Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc

0.9. Size:193K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1592DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current Gain: h = 400(Min) @ I = 2A, V = 2VFE C CELow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

0.10. Size:215K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD1594DESCRIPTIONGood Linearity of hFECollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE U

0.11. Size:216K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor 2SD1591DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 10AFE CComplement to Type 2SB1100Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed hig

0.12. Size:186K inchange semiconductor
2sd1599.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1599DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

0.13. Size:215K inchange semiconductor
2sd1597.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1597DESCRIPTIONCollector Current -I = 30ACHigh DC Current Gain-: h = 1000(Min)@ I = 15AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.AB

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .