2SD1595 Datasheet PDF and Equivalents Search

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 2sd1595.pdf

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 2sd1592.pdf

DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High DC current gain due to Darlington connection Low collector saturation Reverse deterrence type Ideal for use in devices such as pulse motor drivers and relay drivers of PC terminals, a... See More ⇒

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 2sd1590.pdf

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 2sd1591.pdf

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 8.5. Size:118K  jmnic

 2sd1594.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2SD1594 DESCRIPTION With TO-220Fa package APPLICATIONS Low frequency power amplifier High speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO... See More ⇒

 8.6. Size:107K  jmnic

 2sd1591.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS A... See More ⇒

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 2sd1590.pdf

isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A FE C Complement to Type 2SB1099 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switc... See More ⇒

 8.8. Size:193K  inchange semiconductor

 2sd1592.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1592 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High DC Current Gain h = 400(Min) @ I = 2A, V = 2V FE C CE Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... See More ⇒

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 2sd1594.pdf

isc Silicon NPN Power Transistor 2SD1594 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage V = 100V(Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U... See More ⇒

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 2sd1591.pdf

isc Silicon NPN Darlington Power Transistor 2SD1591 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 10A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 10A FE C Complement to Type 2SB1100 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed hig... See More ⇒

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 2sd1599.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1599 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... See More ⇒

 8.12. Size:215K  inchange semiconductor

 2sd1597.pdf

isc Silicon NPN Darlington Power Transistor 2SD1597 DESCRIPTION Collector Current -I = 30A C High DC Current Gain- h = 1000(Min)@ I = 15A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. AB... See More ⇒