2SD1597 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1597
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TOP3
2SD1597 Transistor Equivalent Substitute - Cross-Reference Search
2SD1597 Datasheet (PDF)
2sd1597.pdf
isc Silicon NPN Darlington Power Transistor 2SD1597DESCRIPTIONCollector Current -I = 30ACHigh DC Current Gain-: h = 1000(Min)@ I = 15AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.AB
2sd1592.pdf
DATA SHEETDARLINGTON POWER TRANSISTOR2SD1592NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-VOLTAGE LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Low collector saturation Reverse deterrence type Ideal for use in devices such as pulse motor drivers and relaydrivers of PC terminals, a
2sd1594.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SD1594 DESCRIPTION With TO-220Fa package APPLICATIONS Low frequency power amplifier High speed switching industrial use PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
2sd1591.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1100 APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS A
2sd1590.pdf
isc Silicon NPN Darlington Power Transistor 2SD1590DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3AFE CComplement to Type 2SB1099Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switc
2sd1592.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1592DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current Gain: h = 400(Min) @ I = 2A, V = 2VFE C CELow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP
2sd1594.pdf
isc Silicon NPN Power Transistor 2SD1594DESCRIPTIONGood Linearity of hFECollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE U
2sd1591.pdf
isc Silicon NPN Darlington Power Transistor 2SD1591DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 10AFE CComplement to Type 2SB1100Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed hig
2sd1599.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1599DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
