2SD1619R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1619R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
2SD1619R Transistor Equivalent Substitute - Cross-Reference Search
2SD1619R Datasheet (PDF)
2sd1619.pdf
Ordering number:1785APNP/NPN Epitaxial Planar Silicon Transistors2SB1119/2SD1619LF Amplifier, Electronic Governor ApplicationsFeatures Package Dimensions Very small size making it easy to provide high-unit:mmdensity, small-sized hybrid ICs.2038[2SB1119/2SD1619]E : EmitterC : CollectorB : Base( ) : 2SB1119SANYO : PCP(Bottom view)SpecificationsAbsolute Maxi
2sd1619.pdf
SMD Type TransistorsNPN Transistors2SD16191.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid ICs. Complementary to 2SB11190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitt
2sd1619.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1619DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 25V (Min)(BR)CEOComplement to Type 2SB1119100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for L Amp Electronic Governor applications.FABSOLUTE MAXIMUM RATINGS(Ta=25)S
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
