2SD1624S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1624S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT89
2SD1624S Transistor Equivalent Substitute - Cross-Reference Search
2SD1624S Datasheet (PDF)
2sd1624.pdf
Ordering number:2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1124/2SD1624]Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.
2sb1124 2sd1624.pdf
Ordering number:ENN2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038A[2SB1124/2SD1624]Features4.51.51.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi
2sb1124 2sd1624.pdf
Ordering number : EN2019B2SB1124/2SD1624Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide
2sd1624.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO
2sd1624.pdf
SMD Type TransistorsNPN Transistors2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em
2sd1624-r 2sd1624-s 2sd1624-t 2sd1624-u.pdf
2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60Collector - Emitter Voltage VCEO 50 VEmitter - Base Volta
2sd1624.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1624DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOFast switching speed100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for L Amp Electronic Governor applications.FABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
