All Transistors. 2SD1624S Datasheet

 

2SD1624S Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1624S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SOT89

 2SD1624S Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1624S Datasheet (PDF)

 ..1. Size:1360K  cn shikues
2sd1624r 2sd1624s 2sd1624t 2sd1624u.pdf

2SD1624S
2SD1624S

 7.1. Size:143K  sanyo
2sd1624.pdf

2SD1624S
2SD1624S

Ordering number:2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1124/2SD1624]Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.

 7.2. Size:108K  sanyo
2sb1124 2sd1624.pdf

2SD1624S
2SD1624S

Ordering number:ENN2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038A[2SB1124/2SD1624]Features4.51.51.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi

 7.3. Size:357K  onsemi
2sb1124 2sd1624.pdf

2SD1624S
2SD1624S

Ordering number : EN2019B2SB1124/2SD1624Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide

 7.4. Size:243K  utc
2sd1624.pdf

2SD1624S
2SD1624S

UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO

 7.5. Size:1172K  kexin
2sd1624.pdf

2SD1624S
2SD1624S

SMD Type TransistorsNPN Transistors2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em

 7.6. Size:1317K  slkor
2sd1624-r 2sd1624-s 2sd1624-t 2sd1624-u.pdf

2SD1624S
2SD1624S

2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60Collector - Emitter Voltage VCEO 50 VEmitter - Base Volta

 7.7. Size:208K  inchange semiconductor
2sd1624.pdf

2SD1624S
2SD1624S

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1624DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOFast switching speed100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for L Amp Electronic Governor applications.FABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER

Datasheet: 2SD1622U , 2SD1623 , 2SD1623R , 2SD1623S , 2SD1623T , 2SD1623U , 2SD1624 , 2SD1624R , MJE350 , 2SD1624T , 2SD1624U , 2SD1625 , 2SD1626 , 2SD1627 , 2SD1628 , 2SD1628E , 2SD1628F .

 

 
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