2SD1627 Datasheet, Equivalent, Cross Reference Search

Ordering number:EN2016ANPN Epitaxial Planar Silicon Transistor2SD1627Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers, voltageunit:mmregulator control.2038A[2SD1627]4.5Features1.51.6 High DC current gain (hFE 4000). Wide ASO. Very small size making it easy to provide high-density, small-sized hybrid

SMD Type TransistorsNPN Transistors2SD1627SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

Ordering number:2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1124/2SD1624]Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.

Ordering number:ENN2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038A[2SB1124/2SD1624]Features4.51.51.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi

Ordering number : ENN1727D2SB1123 / 2SD1623PNP / NPN Epitaxial Planar Silicon Transistors2SB1123 / 2SD1623High-Current Switching ApplicationsApplicationsPackage Dimensions Voltage regulators, relay drivers, lamp drivers,unit : mmelectrical equipment.2038A[2SB1123 / 2SD1623]Features4.51.5 Adoption of FBET, MBIT processes.1.6 Low collector-to-emitter sat

Ordering number:1787APNP/NPN Epitaxial Planar Silicon Transistors2SB1121/2SD1621High-Current Driver ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1121/2SD1621]Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wid

Ordering number:EN1781ANPN Epitaxial Planar Silicon Transistor2SD1628High-Current Switching ApplicationsApplications Package Dimensions Strobe DC-DC converters, relay drivers, hammerunit:mmdrivers, lamp drivers, motor drovers.2038A[2SD1628]4.5Features1.51.6 Low saturation voltage. High hFE. Large current capacity. Very small size making it easy t

Ordering number : EN1719C2SD1620SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SD16201.5V, 3V Strobe ApplicationsFeatures Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high cur

Ordering number:1721APNP/NPN Epitaxial Planar Silicon Transistors2SB1126/2SD1626For Various DriversApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers,2038[2SB1126/2SD1626]Features High DC current gain (4000 or greater). Large current capacity. Very small size making it easy to provide high-density, small-sized

Ordering number : EN1727E2SB1123 / 2SD1623SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1123 / 2SD1623High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capaci

Ordering number:2017APNP/NPN Epitaxial Planar Silicon Transistors2SB1125/2SD1625Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2038[2SB1125/2SD1625]Features High DC current gain. Large current capacity and wide ASO. Very small size making it easy to provide high-dens

Ordering number:2040APNP/NPN Epitaxial Planar Silicon Transistors2SB1122/2SD1622Low-Frequency Power Amplifier ApplicationsApplications Package Dimensions Voltage regulators relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1122/2SD1622]Features Adoption of FBET process.. Very small size making it easy to provide high-density hybrid ICs.E : E

Ordering number : EN2019B2SB1124/2SD1624Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide

Ordering number : EN1781B2SD1628Bipolar Transistorhttp://onsemi.com( )20V, 5A, Low VCE sat , NPN Single PCPApplications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor droversFeatures Low saturation voltage High hFE Large current capacity Very small size making it easy to provide highdensity, small-sized hybrid ICs Halo

Ordering number : EN1719D2SD1620Bipolar Transistorhttp://onsemi.com( )10V, 3A, Low VCE sat , NPN Single PCPFeatures Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown Excellent linearity of hFE in the region from low current to high current Ultrasmall size support

Ordering number : EN1727F2SB1123/2SD1623Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching sp

UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO

SMD Type TransistorsNPN Transistors2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em

SMD Type TransistorsNPN Transistors2SD16231.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO.0.42 0.10.46 0.1 Fast switching speed. Complementary to 2SB11231.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - E

SMD Type TransistorsNPN Transistors2SD16211.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed.0.42 0.10.46 0.1 Complementary transistor with the 2SB11211.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

SMD Type TransistorsNPN Transistors2SD1628SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO

SMD Type TransistorsNPN Transistors2SD1620SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEX 20V Collector - Emitter Voltag

SMD Type TransistorsNPN Transistors2SD1626SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=50V Complementary to 2SB11260.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5

SMD Type TransistorsNPN Transistors2SD1625SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=50V Complementary to 2SB11250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5

SMD Type TransistorsNPN Transistors2SD16221.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid ICs.0.42 0.10.46 0.1 Complementary to 2SB11221.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitt

2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60Collector - Emitter Voltage VCEO 50 VEmitter - Base Volta

2SD1623NPN-Silicon General use Transistors1W 1.5A25V ApplicationsCan be used for switching and amplifying in various 4electrical and electronic circuit. Maximum ratings1 2 3Parameters Symbol Rating Unit SOT-89 V VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 Marking VEBO 6 VEmitter-base voltageIC=0 2SD1623=DFS

2SD1628 SOT-89 NPN Transistors Features Collector Current Capability IC=5A3 Collector Emitter Voltage VCEO=20V21.Base12.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1624DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOFast switching speed100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for L Amp Electronic Governor applications.FABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER