2SD1632 Datasheet, Equivalent, Cross Reference Search

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isc Silicon NPN Power Transistor 2SD1632DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (

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Power Transistors2SD1633Silicon NPN triple diffusion planar type darlingtonUnit: mmFor voltage switching10.00.2 4.20.25.50.2 2.70.2 Features 3.10.1 High-speed switching Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw1.30.21.40.1 Absolute Maximum Rating

Product Specification www.jmnic.comSilicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1638 DESCRIPTION With TO-126 package DARLINGTON APPLICATIONS For low frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

isc Silicon NPN Darlington Power Transistor 2SD1634DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Darlington Power Transistor 2SD1633DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Darlington Power Transistor 2SD1638DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequenc