All Transistors. 2SD1634 Datasheet

 

2SD1634 Datasheet and Replacement


   Type Designator: 2SD1634
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 6000
   Noise Figure, dB: -
   Package: TO220
 

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2SD1634 Datasheet (PDF)

 ..1. Size:107K  panasonic
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2SD1634

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 ..2. Size:116K  jmnic
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2SD1634

Product Specification www.jmnic.comSilicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE

 ..3. Size:216K  inchange semiconductor
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2SD1634

isc Silicon NPN Darlington Power Transistor 2SD1634DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 8.1. Size:161K  toshiba
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2SD1634

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (

Datasheet: 2SD1628F , 2SD1628G , 2SD1629 , 2SD163 , 2SD1630 , 2SD1631 , 2SD1632 , 2SD1633 , C5198 , 2SD1635 , 2SD1636 , 2SD1637 , 2SD1638 , 2SD1639 , 2SD164 , 2SD1640 , 2SD1641 .

History: 2SB1131T | CHDTA123EEGP | 2SA762-2 | CSB856B | 2SA746 | HSB772S | 2N513B

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