2SD1634 Datasheet and Replacement
Type Designator: 2SD1634
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 6000
Noise Figure, dB: -
Package: TO220
2SD1634 Substitution
2SD1634 Datasheet (PDF)
2sd1634.pdf

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2sd1634.pdf

Product Specification www.jmnic.comSilicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE
2sd1634.pdf

isc Silicon NPN Darlington Power Transistor 2SD1634DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sd1631.pdf

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (
Datasheet: 2SD1628F , 2SD1628G , 2SD1629 , 2SD163 , 2SD1630 , 2SD1631 , 2SD1632 , 2SD1633 , C5198 , 2SD1635 , 2SD1636 , 2SD1637 , 2SD1638 , 2SD1639 , 2SD164 , 2SD1640 , 2SD1641 .
History: 2SB1131T | CHDTA123EEGP | 2SA762-2 | CSB856B | 2SA746 | HSB772S | 2N513B
Keywords - 2SD1634 transistor datasheet
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History: 2SB1131T | CHDTA123EEGP | 2SA762-2 | CSB856B | 2SA746 | HSB772S | 2N513B



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