2SD1637 PDF and Equivalents Search

 ..1. Size:47K  rohm

 2sd1637.pdf

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 8.1. Size:161K  toshiba

 2sd1631.pdf

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (... See More ⇒

 8.2. Size:125K  nec

 2sd1630.pdf

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 8.3. Size:44K  rohm

 2sd1638.pdf

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 8.4. Size:92K  panasonic

 2sd1632.pdf

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 8.5. Size:107K  panasonic

 2sd1634.pdf

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 8.6. Size:90K  panasonic

 2sd1633.pdf

Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit mm For voltage switching 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features 3.1 0.1 High-speed switching Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maximum Rating... See More ⇒

 8.7. Size:116K  jmnic

 2sd1634.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE... See More ⇒

 8.8. Size:69K  jmnic

 2sd1638.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1638 DESCRIPTION With TO-126 package DARLINGTON APPLICATIONS For low frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co... See More ⇒

 8.9. Size:211K  inchange semiconductor

 2sd1632.pdf

isc Silicon NPN Power Transistor 2SD1632 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

 8.10. Size:216K  inchange semiconductor

 2sd1634.pdf

isc Silicon NPN Darlington Power Transistor 2SD1634 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 8.11. Size:216K  inchange semiconductor

 2sd1633.pdf

isc Silicon NPN Darlington Power Transistor 2SD1633 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 8.12. Size:208K  inchange semiconductor

 2sd1638.pdf

isc Silicon NPN Darlington Power Transistor 2SD1638 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequenc... See More ⇒