All Transistors. 2SD1637 Datasheet

 

2SD1637 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1637
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: TO126

 2SD1637 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1637 Datasheet (PDF)

 ..1. Size:47K  rohm
2sd1637.pdf

2SD1637

 8.1. Size:161K  toshiba
2sd1631.pdf

2SD1637
2SD1637

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (

 8.2. Size:125K  nec
2sd1630.pdf

2SD1637
2SD1637

 8.3. Size:44K  rohm
2sd1638.pdf

2SD1637

 8.4. Size:92K  panasonic
2sd1632.pdf

2SD1637
2SD1637

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.5. Size:107K  panasonic
2sd1634.pdf

2SD1637
2SD1637

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.6. Size:90K  panasonic
2sd1633.pdf

2SD1637
2SD1637

Power Transistors2SD1633Silicon NPN triple diffusion planar type darlingtonUnit: mmFor voltage switching10.00.2 4.20.25.50.2 2.70.2 Features 3.10.1 High-speed switching Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw1.30.21.40.1 Absolute Maximum Rating

 8.7. Size:116K  jmnic
2sd1634.pdf

2SD1637
2SD1637

Product Specification www.jmnic.comSilicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE

 8.8. Size:69K  jmnic
2sd1638.pdf

2SD1637
2SD1637

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1638 DESCRIPTION With TO-126 package DARLINGTON APPLICATIONS For low frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

 8.9. Size:211K  inchange semiconductor
2sd1632.pdf

2SD1637
2SD1637

isc Silicon NPN Power Transistor 2SD1632DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.10. Size:216K  inchange semiconductor
2sd1634.pdf

2SD1637
2SD1637

isc Silicon NPN Darlington Power Transistor 2SD1634DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 8.11. Size:216K  inchange semiconductor
2sd1633.pdf

2SD1637
2SD1637

isc Silicon NPN Darlington Power Transistor 2SD1633DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 8.12. Size:208K  inchange semiconductor
2sd1638.pdf

2SD1637
2SD1637

isc Silicon NPN Darlington Power Transistor 2SD1638DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequenc

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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