All Transistors. 2SD164 Datasheet

 

2SD164 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD164
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

 2SD164 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD164 Datasheet (PDF)

 0.1. Size:762K  sanyo
2sd1649.pdf

2SD164 2SD164

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 0.2. Size:48K  rohm
2sd1646.pdf

2SD164

 0.3. Size:52K  rohm
2sd1647.pdf

2SD164

 0.4. Size:104K  panasonic
2sd1645.pdf

2SD164 2SD164

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.5. Size:153K  panasonic
2sd1640.pdf

2SD164 2SD164

 0.6. Size:107K  panasonic
2sd1641.pdf

2SD164 2SD164

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.7. Size:209K  inchange semiconductor
2sd1646.pdf

2SD164 2SD164

isc Silicon NPN Darlington Power Transistor 2SD1646DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX

 0.8. Size:215K  inchange semiconductor
2sd1649.pdf

2SD164 2SD164

isc Silicon NPN Power Transistor 2SD1649DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 0.9. Size:205K  inchange semiconductor
2sd1640.pdf

2SD164 2SD164

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1640DESCRIPTIONHigh DC Current Gain-: h = 4000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

 0.10. Size:203K  inchange semiconductor
2sd1647.pdf

2SD164 2SD164

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1647DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @I = 1.0AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ge

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: C9013-H | AD130 | AC174 | 2N526A

 

 
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