2SD1640 Specs and Replacement
Type Designator: 2SD1640
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
2SD1640 datasheet
..2. Size:205K inchange semiconductor
2sd1640.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION High DC Current Gain- h = 4000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D... See More ⇒
8.1. Size:762K sanyo
2sd1649.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res... See More ⇒
8.4. Size:104K panasonic
2sd1645.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.5. Size:107K panasonic
2sd1641.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.6. Size:209K inchange semiconductor
2sd1646.pdf
isc Silicon NPN Darlington Power Transistor 2SD1646 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAX... See More ⇒
8.7. Size:215K inchange semiconductor
2sd1649.pdf
isc Silicon NPN Power Transistor 2SD1649 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
8.8. Size:203K inchange semiconductor
2sd1647.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1647 DESCRIPTION Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C High DC Current Gain h = 1000(Min) @I = 1.0A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ge... See More ⇒
Detailed specifications: 2SD1633, 2SD1634, 2SD1635, 2SD1636, 2SD1637, 2SD1638, 2SD1639, 2SD164, TIP122, 2SD1641, 2SD1642, 2SD1643, 2SD1644, 2SD1645, 2SD1646, 2SD1647, 2SD1648
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