2SD1642 Specs and Replacement
Type Designator: 2SD1642
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SD1642 datasheet
8.1. Size:762K sanyo
2sd1649.pdf 
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8.4. Size:104K panasonic
2sd1645.pdf
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8.6. Size:107K panasonic
2sd1641.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.7. Size:209K inchange semiconductor
2sd1646.pdf
isc Silicon NPN Darlington Power Transistor 2SD1646 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAX... See More ⇒
8.8. Size:215K inchange semiconductor
2sd1649.pdf
isc Silicon NPN Power Transistor 2SD1649 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
8.9. Size:205K inchange semiconductor
2sd1640.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION High DC Current Gain- h = 4000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D... See More ⇒
8.10. Size:203K inchange semiconductor
2sd1647.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1647 DESCRIPTION Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C High DC Current Gain h = 1000(Min) @I = 1.0A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ge... See More ⇒
Detailed specifications: 2SD1635, 2SD1636, 2SD1637, 2SD1638, 2SD1639, 2SD164, 2SD1640, 2SD1641, 13007, 2SD1643, 2SD1644, 2SD1645, 2SD1646, 2SD1647, 2SD1648, 2SD1649, 2SD165
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