2SD1651 Specs and Replacement
Type Designator: 2SD1651
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: ISO247
- BJT ⓘ Cross-Reference Search
2SD1651 datasheet
..1. Size:41K wingshing
2sd1651.pdf 
NPN TRIPLE DIFFUSED 2SD1651 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current ... See More ⇒
..2. Size:81K jmnic
2sd1651.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1651 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc... See More ⇒
..3. Size:214K inchange semiconductor
2sd1651.pdf
isc Silicon NPN Power Transistor 2SD1651 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
0.1. Size:211K sanyo
2sd1651c.pdf
Ordering number ENN7086 2SD1651C www.DataSheet4U.com NPN Triple Diffused Planar Silicon Transistor 2SD1651C Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD1651C] 5.6 Adoption of MBIT process. 3.4 16.0 3.1 On-chip ... See More ⇒
8.1. Size:197K toshiba
2sd1658.pdf
2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c... See More ⇒
8.2. Size:347K sanyo
2sd1653.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I... See More ⇒
8.4. Size:356K sanyo
2sd1652.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I... See More ⇒
8.5. Size:346K sanyo
2sd1656.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I... See More ⇒
8.7. Size:86K wingshing
2sd1650.pdf
2SD1650 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PML SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Co... See More ⇒
8.8. Size:85K jmnic
2sd1650.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1650 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT T... See More ⇒
8.9. Size:216K inchange semiconductor
2sd1653.pdf
isc Silicon NPN Power Transistor 2SD1653 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
8.10. Size:214K inchange semiconductor
2sd1650.pdf
isc Silicon NPN Power Transistor 2SD1650 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col... See More ⇒
8.11. Size:216K inchange semiconductor
2sd1654.pdf
isc Silicon NPN Power Transistor 2SD1654 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
8.12. Size:214K inchange semiconductor
2sd1652.pdf
isc Silicon NPN Power Transistor 2SD1652 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.13. Size:215K inchange semiconductor
2sd1656.pdf
isc Silicon NPN Power Transistor 2SD1656 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
8.14. Size:215K inchange semiconductor
2sd1655.pdf
isc Silicon NPN Power Transistor 2SD1655 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
Detailed specifications: 2SD1644
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