2SD1666S Datasheet and Replacement

Ordering number : ENN3031A2SB1133 / 2SD1666PNP / NPN Triple Diffused Planar Silicon Transistors2SB1133 / 2SD1666Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions Wide ASO(Adoption of MBIT process).unit : mm Micaless package facilitating easy mounting.2041A High reliability.[2SB1133 / 2SD1666]4.510.02.83.22.41.61.20.7

isc Silicon NPN Power Transistor 2SD1666DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAXI

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta

Ordering number:2091BPNP/NPN Epitaxial Planar Silicon Transistors2SB1134/2SD166750V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, and other generalunit:mmhigh-current switching applications.2041A[2SB1134/2SD1667]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max/IC=()3A, IB=()0.3A.

Ordering number:2092BPNP/NPN Epitaxial Planar Silicon Transistors2SB1136/2SD166950V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother genral high-current switching applications.2041A[2SB1136/2SD1669]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max.

Ordering number:2094BPNP/NPN Epitaxial Planar Silicon Transistors2SB1135/2SD166850V/7A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2041A[2SB1135/2SD1668]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max. Wide ASO lead

TransistorsMedium Power Transistor (32V, 1A)2SD1664 / 2SD1858FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat), VCE(sat) = 0.15V (typical).(IC/IB = 500mA/50mA)2) Complements the2SB1132 / 2SB1237.FStructureEpitaxial planar typeNPN silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-207-D12)249Transistors 2SD1664 / 2SD1858FElectrical characteristics (

UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicontransistor. FEATURES *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

2SD1664NPN Silicon Elektronische BauelementeGeneral Purpose TransistorR o H S C o m p lia n t P ro d u ctDD1AFeaturesSOT-89b112bPower dissipationCe3e1PCM : 0.5 W (Tamb= 25oC)1.BASECollector currentDimensions In Millimeters Dimensions In Inches2.COLLECTORSymbolMin Max Min MaxICM : 1 A3.EMITTERA 1.400 1.600 0.055 0.063b 0.320 0.520 0.013 0

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

2SD1664TRANSISTOR (NPN)SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units3. EMITTER 3 VCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 32 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Conti

2SD1664SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.61.81.41.43. EMITTER 3 2.64.25Features2.43.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN0.530.40 Complements to 2SB1132 0.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimete

2SD1664NPN Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23Features:* Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage40VCEOVCollector-Emitter Voltage 32VEBOVEmitter-Base Voltage 5.0Collector CurrentIC A1.0Collecto

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V

2SD1664 Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , 2SB1132 Low saturation voltage, complements the 2SB1132. / Applications Medium power amplifier applications. / Equ

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

SMD Type TransistorsNPN Transistors2SD16641.70 0.1FeaturesLow VCE(sat)Compliments to 2SB11320.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 32 VEmitter-Base Voltage VEBO 5 VCollector Current (DC) 1 AICPW=20ms, duty=1/2 2 ACollector Power Di

CHENMKO ENTERPRISE CO.,LTD2SD1664GPSURFACE MOUNTNPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESC-62/SOT-89* Suitable for high packing density.* Low voltage (Max.=32V) .* High saturation current capability.* Voltage controlled small signal switch. 4.6MAX. 1

Plastic-Encapsulate TransistorsFEATURES2SD1664 (NPN) Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) Complements to 2SB1132Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 32 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 1 A1. BASECollector Power dissipa

isc Silicon NPN Power Transistor 2SD1667DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)@ I = 3ACE(sat) CComplement to Type 2SB1134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,and othergeneral hig

isc Silicon NPN Power Transistor 2SD1663DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1300V (Min.)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1669DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)CE(sat)Wide Area of Safe OperationComplement to Type 2SB1136Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high speed inverters,c

isc Silicon NPN Power Transistor 2SD1668DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)CE(sat)Wide Area of Safe OperationComplement to Type 2SB1135Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high speed inverters,c