2SD1669 Datasheet and Replacement

Ordering number:2092BPNP/NPN Epitaxial Planar Silicon Transistors2SB1136/2SD166950V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother genral high-current switching applications.2041A[2SB1136/2SD1669]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max.

isc Silicon NPN Power Transistor 2SD1669DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)CE(sat)Wide Area of Safe OperationComplement to Type 2SB1136Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high speed inverters,c

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta

Ordering number:2091BPNP/NPN Epitaxial Planar Silicon Transistors2SB1134/2SD166750V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, and other generalunit:mmhigh-current switching applications.2041A[2SB1134/2SD1667]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max/IC=()3A, IB=()0.3A.

Ordering number : ENN3031A2SB1133 / 2SD1666PNP / NPN Triple Diffused Planar Silicon Transistors2SB1133 / 2SD1666Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions Wide ASO(Adoption of MBIT process).unit : mm Micaless package facilitating easy mounting.2041A High reliability.[2SB1133 / 2SD1666]4.510.02.83.22.41.61.20.7

Ordering number:2094BPNP/NPN Epitaxial Planar Silicon Transistors2SB1135/2SD166850V/7A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2041A[2SB1135/2SD1668]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max. Wide ASO lead

TransistorsMedium Power Transistor (32V, 1A)2SD1664 / 2SD1858FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat), VCE(sat) = 0.15V (typical).(IC/IB = 500mA/50mA)2) Complements the2SB1132 / 2SB1237.FStructureEpitaxial planar typeNPN silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-207-D12)249Transistors 2SD1664 / 2SD1858FElectrical characteristics (

UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicontransistor. FEATURES *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

2SD1664NPN Silicon Elektronische BauelementeGeneral Purpose TransistorR o H S C o m p lia n t P ro d u ctDD1AFeaturesSOT-89b112bPower dissipationCe3e1PCM : 0.5 W (Tamb= 25oC)1.BASECollector currentDimensions In Millimeters Dimensions In Inches2.COLLECTORSymbolMin Max Min MaxICM : 1 A3.EMITTERA 1.400 1.600 0.055 0.063b 0.320 0.520 0.013 0

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

2SD1664TRANSISTOR (NPN)SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units3. EMITTER 3 VCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 32 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Conti

2SD1664SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.61.81.41.43. EMITTER 3 2.64.25Features2.43.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN0.530.40 Complements to 2SB1132 0.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimete

2SD1664NPN Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23Features:* Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage40VCEOVCollector-Emitter Voltage 32VEBOVEmitter-Base Voltage 5.0Collector CurrentIC A1.0Collecto

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V

2SD1664 Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , 2SB1132 Low saturation voltage, complements the 2SB1132. / Applications Medium power amplifier applications. / Equ

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

SMD Type TransistorsNPN Transistors2SD16641.70 0.1FeaturesLow VCE(sat)Compliments to 2SB11320.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 32 VEmitter-Base Voltage VEBO 5 VCollector Current (DC) 1 AICPW=20ms, duty=1/2 2 ACollector Power Di

CHENMKO ENTERPRISE CO.,LTD2SD1664GPSURFACE MOUNTNPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESC-62/SOT-89* Suitable for high packing density.* Low voltage (Max.=32V) .* High saturation current capability.* Voltage controlled small signal switch. 4.6MAX. 1

Plastic-Encapsulate TransistorsFEATURES2SD1664 (NPN) Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) Complements to 2SB1132Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 32 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 1 A1. BASECollector Power dissipa

isc Silicon NPN Power Transistor 2SD1666DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SD1667DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)@ I = 3ACE(sat) CComplement to Type 2SB1134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,and othergeneral hig

isc Silicon NPN Power Transistor 2SD1663DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1300V (Min.)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1668DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)CE(sat)Wide Area of Safe OperationComplement to Type 2SB1135Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high speed inverters,c