2SD1672 Datasheet. Specs and Replacement

Type Designator: 2SD1672  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3500

Noise Figure, dB: -

Package: TO218

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2SD1672 datasheet

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2SD1672

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2SD1672

Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 18V zener diode is built in between collector and base. Low collector to emitter saturation voltage VCE(sat). 1 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 3... See More ⇒

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2SD1672

isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 10A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low speed high current s... See More ⇒

 8.3. Size:189K  inchange semiconductor

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 7A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For lo... See More ⇒

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Detailed specifications: 2SD1668S, 2SD1669, 2SD1669Q, 2SD1669R, 2SD1669S, 2SD167, 2SD1670, 2SD1671, 2SC2655, 2SD1673, 2SD1676, 2SD1677, 2SD1678, 2SD1679, 2SD168, 2SD1680, 2SD1681

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