All Transistors. 2SD1678 Datasheet

 

2SD1678 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1678
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: MT-200

 2SD1678 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1678 Datasheet (PDF)

 ..1. Size:194K  inchange semiconductor
2sd1678.pdf

2SD1678
2SD1678

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1678DESCRIPTIONHigh DC Current Gain-h = 750(Min)@ I = 15AFE CHigh Collector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsA

 8.1. Size:56K  panasonic
2sd1679 e.pdf

2SD1678
2SD1678

Transistor2SD1679Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.1518V zener diode is built in between collector and base.Low collector to emitter saturation voltage VCE(sat).1High foward current transfer ratio hFE.Mini type package, allowing downsizing of the equipment and3

 8.2. Size:34K  no
2sd1672.pdf

2SD1678

 8.3. Size:219K  inchange semiconductor
2sd1670.pdf

2SD1678
2SD1678

isc Silicon NPN Darlington Power Transistor 2SD1670DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000( Min.) @ I = 10AFE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low speed high current s

 8.4. Size:189K  inchange semiconductor
2sd1673.pdf

2SD1678
2SD1678

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1673DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain-: h = 1000( Min.) @ I = 7AFE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor lo

 8.5. Size:212K  inchange semiconductor
2sd1677.pdf

2SD1678
2SD1678

isc Silicon NPN Power Transistor 2SD1677DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top