2SD1679 Datasheet. Specs and Replacement

Type Designator: 2SD1679  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

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2SD1679 datasheet

 ..1. Size:56K  panasonic

 2sd1679 e.pdf pdf_icon

2SD1679

Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 18V zener diode is built in between collector and base. Low collector to emitter saturation voltage VCE(sat). 1 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 3... See More ⇒

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2SD1679

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 8.2. Size:219K  inchange semiconductor

 2sd1670.pdf pdf_icon

2SD1679

isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 10A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low speed high current s... See More ⇒

 8.3. Size:189K  inchange semiconductor

 2sd1673.pdf pdf_icon

2SD1679

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 7A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For lo... See More ⇒

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Detailed specifications: 2SD167, 2SD1670, 2SD1671, 2SD1672, 2SD1673, 2SD1676, 2SD1677, 2SD1678, 2222A, 2SD168, 2SD1680, 2SD1681, 2SD1681Q, 2SD1681R, 2SD1681S, 2SD1681T, 2SD1682

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