2SD1683T Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1683T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: ISO126
2SD1683T Transistor Equivalent Substitute - Cross-Reference Search
2SD1683T Datasheet (PDF)
2sd1683.pdf
Ordering number:2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042A[2SB1143/2SD1683]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : C
2sb1143 2sd1683.pdf
Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and
2sd1683.pdf
isc Silicon NPN Power Transistor 2SD1683DESCRIPTIONHigh Collector Current-I = 4ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2ACE(sat) CComplement to Type 2SB1143Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in voltage regulations, relay drivers, lampdrivers and electrical equipment.ABSOLUTE MAX
Datasheet: 2SD1682 , 2SD1682R , 2SD1682S , 2SD1682T , 2SD1682U , 2SD1683 , 2SD1683R , 2SD1683S , BF422 , 2SD1683U , 2SD1684 , 2SD1684R , 2SD1684S , 2SD1684T , 2SD1685 , 2SD1685E , 2SD1685F .
