2SD1684S Datasheet and Replacement
Type Designator: 2SD1684S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: ISO126
2SD1684S Transistor Equivalent Substitute - Cross-Reference Search
2SD1684S Datasheet (PDF)
2sd1684.pdf
Ordering number 2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features Package Dimensions Adoption of FBET and MBIT processes. unit mm High breakdown voltage. 2042B Low saturation voltage. [2SB1144/2SD1684] Plastic-covered heat sink facilitating high-density mounting. 1 Emitter 2 Collector 3 Base ( ) 2... See More ⇒
2sd1684.pdf
isc Silicon NPN Power Transistor 2SD1684 DESCRIPTION Collector Saturation Voltage Low V = -0.5V(Max)@I = -0.5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1144 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
2sd1683.pdf
Ordering number 2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042A [2SB1143/2SD1683] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. B Base C C... See More ⇒
2sb1143 2sd1683.pdf
Ordering number ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042B [2SB1143/2SD1683] Features 8.0 4.0 3.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and ... See More ⇒
Datasheet: 2SD1682U , 2SD1683 , 2SD1683R , 2SD1683S , 2SD1683T , 2SD1683U , 2SD1684 , 2SD1684R , TIP32C , 2SD1684T , 2SD1685 , 2SD1685E , 2SD1685F , 2SD1685G , 2SD1686 , 2SD1687 , 2SD1688 .
History: 2SA1036-R
Keywords - 2SD1684S transistor datasheet
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History: 2SA1036-R
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