2SD1701 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1701
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: TO92
2SD1701 Transistor Equivalent Substitute - Cross-Reference Search
2SD1701 Datasheet (PDF)
2sd1707.pdf
Power Transistors2SD1707Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1156 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install
2sd1705.pdf
Power Transistors2SD1705Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1154 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install
2sd1702.pdf
SMD Type TransistorsNPN Transistors2SD1702SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE
2sd1707.pdf
isc Silicon NPN Power Transistor 2SD1707DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 8ACE(sat) CComplement to Type 2SB1156Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
2sd1705.pdf
isc Silicon NPN Power Transistor 2SD1705DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 6ACE(sat) CComplement to Type 2SB1154Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
2sd1709.pdf
isc Silicon NPN Power Transistor 2SD1709DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
2sd1706.pdf
isc Silicon NPN Power Transistor 2SD1706DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB1155Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications
Datasheet: 2SD1695 , 2SD1696 , 2SD1697 , 2SD1698 , 2SD1699 , 2SD17 , 2SD170 , 2SD1700 , TIP42C , 2SD1702 , 2SD1703 , 2SD1704 , 2SD1705 , 2SD1706 , 2SD1707 , 2SD1708 , 2SD1709 .
