All Transistors. 2SD1701 Datasheet

 

2SD1701 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1701

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 1700 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO92

2SD1701 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1701 Datasheet (PDF)

0.1. 2sd1701.pdf Size:60K _nec

2SD1701

8.1. 2sd1702.pdf Size:197K _nec

2SD1701
2SD1701

8.2. 2sd1707.pdf Size:93K _panasonic

2SD1701
2SD1701

Power Transistors2SD1707Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1156 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install

 8.3. 2sd1706.pdf Size:174K _panasonic

2SD1701
2SD1701

8.4. 2sd1705.pdf Size:92K _panasonic

2SD1701
2SD1701

Power Transistors2SD1705Silicon NPN epitaxial planar typeUnit: mmFor power switching15.00.3 5.00.211.00.2 (3.2)Complementary to 2SB1154 Features 3.20.1 Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC2.00.2 2.00.1 Full-pack package which can be install

 8.5. 2sd1702.pdf Size:1053K _kexin

2SD1701
2SD1701

SMD Type TransistorsNPN Transistors2SD1702SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

8.6. 2sd1707.pdf Size:218K _inchange_semiconductor

2SD1701
2SD1701

isc Silicon NPN Power Transistor 2SD1707DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 8ACE(sat) CComplement to Type 2SB1156Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications

8.7. 2sd1706.pdf Size:216K _inchange_semiconductor

2SD1701
2SD1701

isc Silicon NPN Power Transistor 2SD1706DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 7ACE(sat) CComplement to Type 2SB1155Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications

8.8. 2sd1709.pdf Size:215K _inchange_semiconductor

2SD1701
2SD1701

isc Silicon NPN Power Transistor 2SD1709DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

8.9. 2sd1705.pdf Size:215K _inchange_semiconductor

2SD1701
2SD1701

isc Silicon NPN Power Transistor 2SD1705DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 0.5V(Max.)@ I = 6ACE(sat) CComplement to Type 2SB1154Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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