2SD1722Q Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1722Q
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO247
2SD1722Q Transistor Equivalent Substitute - Cross-Reference Search
2SD1722Q Datasheet (PDF)
2sd1722.pdf
Ordering number:2046APNP/NPN Epitaxial Planar Silicon Transistors2SB1165/2SD172250V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE
2sd1724.pdf
Ordering number:2047APNP/NPN Epitaxial Planar Silicon Transistors2SB1167/2SD1724100V/3A Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE : E
2sd1725.pdf
Ordering number:ENN2048BPNP/NPN Epitaxial Planar Silicon Transistors2SB1168/2SD1725Large Current Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043BFeatures [2SB1168/2SD1725]8.02.0 Low collector-to-emitter saturation voltage. 2.74.0 High fT. Excellent linearity of hFE. Short switching time.1
2sd1723.pdf
Ordering number:2021APNP/NPN Epitaxial Planar Silicon Transistors2SB1166/2SD172350V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time.B : BaseC : CollectorE
2sd1729.pdf
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2sd1720.pdf
isc Silicon NPN Power Transistor 2SD1720DESCRIPTIONHigh Collector Current:: I = 5ACLow Collector Saturation Voltage: V = 1.0V(Max.)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M
2sd1728.pdf
isc Silicon NPN Power Transistor 2SD1728DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sd1727.pdf
isc Silicon NPN Power Transistor 2SD1727DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sd1729.pdf
isc Silicon NPN Power Transistor 2SD1729DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
