2SD174F Datasheet. Specs and Replacement
Type Designator: 2SD174F 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
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2SD174F datasheet
8.1. Size:58K panasonic
2sd1745.pdf 
Power Transistors 2SD1745 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1175 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder... See More ⇒
8.2. Size:58K panasonic
2sd1746.pdf
Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1176 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder... See More ⇒
8.3. Size:49K panasonic
2sd1742.pdf
Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For low-freauency power amplification 3.0 0.2 Complementary to 2SB1172 and 2SB1172A Features High forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) I type package e... See More ⇒
8.4. Size:65K panasonic
2sd1749.pdf
Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type Darlington For low-freauency power amplification Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1179 and 2SB1179A Features High foward current transfer ratio hFE 1.1 0.1 0.85 0.1 High-speed switching 0.75 0.1 0.4 0.1 I type package enabling direct soldering of the radiating fin to th... See More ⇒
8.5. Size:62K panasonic
2sd1747.pdf
Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit mm 7.0 0.3 3.5 0.2 Complementary to 2SB1177 3.0 0.2 Features Low collector to emitter saturation voltage VCE(sat) 1.1 0.1 0.85 0.1 Satisfactory linearity of foward current transfer ratio hFE 0.75 0.1 0.4 0.1 Large collector current IC I type package enabling direct sol... See More ⇒
8.6. Size:58K panasonic
2sd1744.pdf
Power Transistors 2SD1744 Silicon NPN epitaxial planar type Unit mm For power switching 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1174 Features 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 2.3 0.2 I type package enabling direct solder... See More ⇒
8.7. Size:49K panasonic
2sd1743.pdf
Power Transistors 2SD1743, 2SD1743A Silicon NPN triple diffusion planar type Unit mm 7.0 0.3 3.5 0.2 For power amplification 3.0 0.2 Complementary to 2SB1173 and 2SB1173A Features High forward current transfer ratio hFE which has satisfactory linearity 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 Low collector to emitter saturation voltage VCE(sat) I type package enabling direct... See More ⇒
8.8. Size:65K panasonic
2sd1748.pdf
Power Transistors 2SD1748, 2SD1748A Silicon NPN triple diffusion planar type Darlington Unit mm For low-freauency power amplification 7.0 0.3 3.5 0.2 3.0 0.2 Complementary to 2SB1178 and 2SB1178A Features High foward current transfer ratio hFE 1.1 0.1 0.85 0.1 0.75 0.1 0.4 0.1 High-speed switching I type package enabling direct soldering of the radiating fin to the... See More ⇒
8.10. Size:1186K kexin
2sd1745.pdf
SMD Type Transistors NPN Transistors 2SD1745 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 Features 5.30+0.2 0.50 +0.8 -0.2 -0.7 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.127 0.80+0.1 max -0.1 Complementary to 2SB1175 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 ... See More ⇒
8.11. Size:1182K kexin
2sd1746.pdf
SMD Type Transistors NPN Transistors 2SD1746 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 0.127 -0.1 Large collector current IC 0.80+0.1 max Complementary to 2SB1176 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 ... See More ⇒
8.12. Size:758K kexin
2sd1742.pdf
SMD Type Transistors NPN Transistors 2SD1742 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 0.80-0.1 max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172 + 0.1 2.3 0.60- 0.1 1 Base +0.15 4.60 -0.15 2 Co... See More ⇒
8.13. Size:1148K kexin
2sd1742a.pdf
SMD Type Transistors NPN Transistors 2SD1742A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 5.30+0.2 0.50 +0.8 -0.2 -0.7 Features High forward current transfer ratio hFE which has satisfactory linearity 0.127 +0.1 0.80-0.1 max Low collector to emitter saturation voltage VCE(sat) Complementary to 2SB1172A + 0.1 2.3 0.60- 0.1 1 Base +0.15 4.60 -0.15 2 ... See More ⇒
Detailed specifications: 2SD1742, 2SD1743, 2SD1744, 2SD1745, 2SD1746, 2SD1747, 2SD1748, 2SD1749, MJE350, 2SD175, 2SD1750, 2SD1751, 2SD1752, 2SD1753, 2SD1754, 2SD1755, 2SD1756
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