2N2297-51 Specs and Replacement
Type Designator: 2N2297-51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO51
2N2297-51 Substitution
- BJT ⓘ Cross-Reference Search
2N2297-51 datasheet
NO PDF data!
Detailed specifications: 2N2290, 2N2291, 2N2292, 2N2293, 2N2294, 2N2295, 2N2296, 2N2297, 2SB817, 2N2297S, 2N23, 2N230, 2N2303, 2N2303-46, 2N2303-51, 2N2304, 2N2305
Keywords - 2N2297-51 pdf specs
2N2297-51 cross reference
2N2297-51 equivalent finder
2N2297-51 pdf lookup
2N2297-51 substitution
2N2297-51 replacement
History: 2N23
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
tip41c replacement | b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement | m3056m mosfet | skd502t mosfet
